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STL6NM60N
P1-P3
P4-P6
P7-P9
P10-P12
Obsolete Product(s) - Obsolete Product(s)
STL6NM60N
Electrical charac
teristics
7/12
Figure 8.
Gate c
harge vs gat
e-source
v
oltage
Figure 9.
Capacitance var
iations
Figure 10.
Normalized gate threshold v
oltage
vs temperature
Figure 11.
Normalized on resistance vs
temperature
Figure 12.
Sour
ce-drain diode fo
rward
characterist
ics
Figure 13.
Normalized B
VDSS
vs temperature
Obsolete Product(s) - Obsolete Product(s)
Test circuit
STL6NM60N
8/12
3
T
est cir
cuit
Figure 14.
Switching times test circ
uit for
resistive l
oad
Figure 15.
Gate char
ge test cir
cuit
Figure 16.
T
es
t circuit for inductive load
switc
hing and diode recovery times
Figure 17.
Uncl
amped inductive load test
circuit
Figure 18.
Uncla
mped inductive wa
vef
o
rm
Figure 19.
Switching time wavef
orm
Obsolete Product(s) - Obsolete Product(s)
STL6NM60N
Package mechanica
l data
9/12
4
P
ac
kage mechanical data
In order to meet en
vironmental requ
irements, ST of
fers th
ese de
vices in ECOP
ACK®
pac
kages. These pac
kages ha
ve
a Lead-free second le
v
el interconnect. The catego
r
y of
second le
ve
l interconnect is marked on
the package an
d on the inner bo
x label, in
compliance with JEDEC Standard
JESD97. The maximum ratings relate
d to soldering
conditions are also mark
ed on the inner bo
x label. ECOP
A
CK is an ST trademark.
ECOP
ACK specifications are av
ailable at:
www
.st.c
om
P1-P3
P4-P6
P7-P9
P10-P12
STL6NM60N
Mfr. #:
Buy STL6NM60N
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 600V 5.75A POWERFLAT
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
Payment:
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STL6NM60N