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NTJD2152PT4G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1 Publication Order Number:
NTJD2152/D
NTJD2152P
Trench Small Signal
MOSFET
8 V, Dual P−Channel, SC−88
ESD Protection
Features
• Leading –8 V Trench for Low R
DS(ON)
Performance
• ESD Protected Gate
• Small Footprint (2 x 2 mm)
• Same Package as SC−70−6
• Pb−Free Packages are Available
Applications
• Load Power switching
• DC−DC Conversion
• Li−Ion Battery Charging Circuits
• Cell Phones, Media Players, Digital Cameras, PDAs
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−8.0 V
Gate−to−Source Voltage V
GS
±8.0 V
Continuous Drain
Current
(Based on R
q
JA
)
Steady
State
T
A
= 25 °C
I
D
−0.775
A
T
A
= 85 °C −0.558
Power Dissipation
(Based on R
q
JA
)
Steady
State
T
A
= 25 °C
P
D
0.27
W
T
A
= 85 °C 0.14
Continuous Drain
Current
(Based on R
q
JL
)
Steady
State
T
A
= 25 °C
I
D
−1.1
A
T
A
= 85 °C −0.8
Power Dissipation
(Based on R
q
JL
)
Steady
State
T
A
= 25 °C
P
D
0.55
W
T
A
= 85 °C 0.29
Pulsed Drain Current
t ≤10 ms
I
DM
±1.2 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Continuous Source Current (Body Diode) I
S
−0.775 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Typ Max Unit
Junction−to−Ambient – Steady State
R
q
JA
400 460
°C/W
Junction−to−Lead (Drain) – Steady State
R
q
JL
194 226
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
http://onsemi.com
SOT−363
SC−88 (6 LEADS)
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
V
(BR)DSS
R
DS(on)
TYP I
D
Max
−8 V
0.22 W @ −4.5 V
0.32 W @ −2.5 V
0.51 W @ −1.8 V
−0.775 A
D
2
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
TA M G
G
1
6
1
TA = Device Code
M = Date Code
G = Pb−Free Package
D1 G2 S2
S1 G1 D2
(Note: Microdot may be in either location)
SC−88/SOT−363
CASE 419B
STYLE 28
NTJD2152P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
=25°C unless otherwise stated)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−8.0 −10.5 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
T
J
−6.0 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= −6.4 V 1.0
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±8.0 V 10
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, ID = −250 mA
−0.45 −0.83 −1.0 V
Gate Threshold Temperature
Coefficient
V
GS(TH)
/T
J
2.2 mV/ °C
Drain−to−Source On Resistance R
DS(on)
V
GS
= −4.5 V, I
D
= −0.57 A 0.22 0.3 W
V
GS
= −2.5 V, I
D
= −0.48 A 0.32 0.46
V
GS
= −1.8 V, I
D
= −0.20 A 0.51 0.9
Forward Transconductance g
FS
V
GS
= −4.0 V, I
D
= −0.57 A 2.0 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −8.0 V
160 225
pF
Output Capacitance C
OSS
38 55
Reverse Transfer Capacitance C
RSS
28 40
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −5.0 V,
I
D
= −0.6 A
2.2 4.0
nC
Threshold Gate Charge Q
G(TH)
0.1
Gate−to−Source Charge Q
GS
0.5
Gate−to−Drain Charge Q
GD
0.5
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td
(ON)
V
GS
= −4.5 V, V
DD
= −4.0 V,
I
D
= −0.5 A, R
G
= 8.0 W
13
ns
Rise Time tr 23
Turn−Off Delay Time td
(OFF)
50
Fall Time tf 36
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= −0.23 A
T
J
= 25°C 0.76 1.1
V
T
J
= 125°C 0.63
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= −0.77 A
78 ns
2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTJD2152P
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
0
1.4
1
62
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
0.6
0.2
0
Figure 1. On−Region Characteristics
0.4
1.4
21.2 2.4
1
0.6
0.2
0.8
0
0
Figure 2. Transfer Characteristics
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.1
0.4 1
0.3
0.2
0
Figure 3. On−Resistance vs. Drain Current and
Temperature
−I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
−I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Temperature
−50 0−25 25
1.4
1.2
1
0.8
0.6
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.5
0.2 0.6
T
J
= −55°C
T
J
= 125°C
75 150
I
D
= −0.7 A
V
GS
= −4.5 V
and −2.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
25°C
1.6
−1.2 V
0 1.4
Figure 6. Capacitance Variation
−1.4 V
−1.6 V
−1.8 V
8
−2 V
V
DS
≥ −10 V
0.4
V
GS
= −2.2 V
V
GS
= −4.5 V to −2.6 V
0.4
0.8
1.2
1.2
0.8
0.4
1.6
T
J
= 125°C
1.20.8
V
GS
= −4.5 V
T
J
= −55°C
T
J
= 25°C
0.1
0.4 1
0.3
0.2
0
−I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.5
0.2 0.6
T
J
= 125°C
0 1.4
0.4
1.20.8
V
GS
= −2.5 V
T
J
= −55°C
T
J
= 25°C
V
GS
= 0 V
−4−8
300
180
120
60
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
T
J
= 25°C
C
oss
C
iss
C
rss
240
−60−2
P1-P3P4-P6

NTJD2152PT4G

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Buy NTJD2152PT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET 8V Dual P-Channel ESD Protection
Lifecycle:
New from this manufacturer.
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