NTJD2152PT4G

NTJD2152P
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
V
GS
Figure 7. GatetoSource and
DraintoSource Voltage vs. Total Charge
0 1.2
4
1
0
Figure 8. Diode Forward Voltage vs. Current
Q
g
, TOTAL GATE CHARGE (nC)
V
GS,
GATETOSOURCE VOLTAGE (VOLTS)
I
D
= 0.6 A
T
J
= 25°C
21.6
2
3
Q
GS
5
0.80.4 2.4
0.8
0.1
0
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
0.7
0.60.40
0.4
0.5
0.6
0.2
0.3
10.2
T
J
= 25°C
T
J
= 150°C
Q
G(TOT)
Q
GD
NTJD2152P
http://onsemi.com
5
ORDERING INFORMATION
Device Order Number Package Type Tape and Reel Size
NTJD2152PT1 SOT363 3000 / Tape & Reel
NTJD2152PT1G SOT363
(PbFree)
3000 / Tape & Reel
NTJD2152PT2 SOT363 3000 / Tape & Reel
NTJD2152PT2G SOT363
(PbFree)
3000 / Tape & Reel
NTJD2152PT4 SOT363 10,000 / Tape & Reel
NTJD2152PT4G SOT363
(PbFree)
10,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
NTJD2152P
http://onsemi.com
6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B01 OBSOLETE, NEW STANDARD 419B02.
E0.2 (0.008)
MM
123
D
e
A1
A
A3
C
L
654
E
b
6 PL
SC88/SC706/SOT363
CASE 419B02
ISSUE W
DIM MIN NOM MAX
MILLIMETERS
A 0.80 0.95 1.10
A1 0.00 0.05 0.10
A3
b 0.10 0.21 0.30
C 0.10 0.14 0.25
D 1.80 2.00 2.20
0.031 0.037 0.043
0.000 0.002 0.004
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.20 REF 0.008 REF
H
E
H
E
E 1.15 1.25 1.35
e 0.65 BSC
L 0.10 0.20 0.30
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
ǒ
mm
inches
Ǔ
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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291 Kamimeguro, Meguroku, Tokyo, Japan 1530051
Phone: 81357733850
NTJD2152P/D
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NTJD2152PT4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET 8V Dual P-Channel ESD Protection
Lifecycle:
New from this manufacturer.
Delivery:
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