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25
I
RMS,CNTL
is the RMS value of the current in the control
MOSFET:
(eq. 21)
I
RMS,CNTL
+ (D
(I
Lo,MAX
2
* I
Lo,MAX
I
Lo,MIN
)
I
Lo,MIN
2
3
))
1ń2
I
Lo,MAX
is the maximum output inductor current:
I
Lo,MAX
+
I
O,MAX
f
)
DI
Lo
2
(eq. 22)
I
Lo,MIN
is the minimum output inductor current:
I
Lo,MIN
+
I
O,MAX
f
*
DI
Lo
2
(eq. 23)
I
O,MAX
is the maximum converter output current.
D is the duty cycle of the converter:
D +
V
OUT
V
IN
(eq. 24)
DI
Lo
is the peaktopeak ripple current in the output
inductor of value L
o
:
DI
Lo
+ (V
IN
* V
OUT
)
D
(Lo f
SW
)
(eq. 25)
R
DS(on)
is the ON resistance of the high side MOSFET at
the applied gate drive voltage. Q
switch
is the post gate
threshold portion of the gatetosource charge plus the
gatetodrain charge. This may be specified in the data sheet
or approximated from the gatecharge curve as shown in the
Figure 25.
Q
switch
+ Q
gs2
) Q
gd
(eq. 26)
I
g
is the output current from the gate driver IC.
V
IN
is the input voltage to the converter.
f
sw
is the switching frequency of the converter.
Q
RR
is the reverse recovery charge of the lower
MOSFET.
Q
oss
is the sum of the high and low side MOSFET
output charges specified in the data sheets, or
estimated from integrating C
OSS
from zero volts to
V
IN
.
For the lower or synchronous MOSFET, the power
dissipation can be approximated from:
P
D,SYNCH
+ (I
RMS,SYNCH
2
R
DS(on)
)
) (Vf
diode
I
O,MAX
t
nonoverlap
f
SW
)
(eq. 27)
where:
Vf
diode
is the forward voltage of the MOSFET’s
intrinsic diode at the converter output current.
t
nonoverlap
is the nonoverlap time between the upper
and lower gate drivers to prevent cross conduction.
This time is usually specified in the data sheet for the
driver IC.
The first term represents the conduction or I
2
R losses
when the MOSFET is ON and the second term represents the
diode losses that occur during the gate nonoverlap time.
All terms were defined in the previous discussion for the
control MOSFET with the exception of:
(eq. 28)
I
RMS,SYNCH
+ ((1 * D)
(I
Lo,MAX
2
) I
Lo,MAX
I
Lo,MIN
)
I
Lo,MIN
2
3
))
1ń2
I
D
V
GATE
V
DRAIN
Q
GD
Q
GS2
Q
GS1
V
GS_TH
Figure 25. MOSFET Switching Characteristics
When the MOSFET power dissipations are known, the
designer can calculate the required thermal impedance to
maintain a specified junction temperature at the worst case
ambient operating temperature.
q
T
t (T
J
* T
A
)ńP
D
(eq. 29)
where:
q
T
is the total thermal impedance (q
JC
+ q
SA
);
q
JC
is the junctiontocase thermal impedance of the
MOSFET;
q
SA
is the sinktoambient thermal impedance of
the heatsink assuming direct mounting of the
MOSFET if no thermal “pad” is used;
T
J
is the specified maximum allowed junction
temperature;
T
A
is the worst case ambient operating temperature.
For TO220 and TO263 packages, standard FR4
copper clad circuit boards will have approximate thermal
resistances (q
SA
) as shown below:
Pad Size (in
2
/mm
2
) SingleSided 1 oz. Copper
0.50/323 6065°C/W
0.75/484 5560°C/W
1.00/645 5055°C/W
1.50/968 4550°C/W
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26
As with any power design, proper laboratory testing
should be performed to insure the design will dissipate the
required power under worst case operating conditions.
Variables considered during testing should include
maximum ambient temperature, minimum airflow,
maximum input voltage, maximum loading and component
variations (i.e., worst case MOSFET R
DS(on)
). Also, the
inductors and capacitors share the MOSFET’s heatsinks and
will add heat and raise the temperature of the circuit board
and MOSFET. For any new design, it is advisable to have as
much heatsink area as possible. All too often, new designs are
found to be too hot and require redesign to add heatsinking.
7. Error Amplifier Tuning
The high frequency gain of the voltage feedback loop
affects transient response and control loop stability. This
loop gain can be adjusted by changing the Error Amplifiers
high frequency gain, which is done by increasing or
decreasing the Error Amplifier output loading capacitor
(C
AMP
). The Error Amplifier has a transconductance
characteristic (amplifier output current is proportional to
amplifier input voltage), causing amplifier output voltage to
be proportional to amplifier output load impedance.
If C
AMP
is too large, the loop gain at high frequencies will
be too low, and the converter output voltage may exhibit an
underdamped response to a load transient. On the other
hand, if C
AMP
is too small, there will be too much loop gain
at high frequencies, which may decrease converter output
voltage stability. For initial prototype startup, C
AMP
= 10 nF
is recommended. When reducing C
AMP
, peaktopeak
ripple voltage at the COMP pin should remain less than
20 mVpp. Excessive ripple at the COMP pin will
contribute to PWM pulse jitter. In general, the lowest loop
gain that achieves acceptable transient response should be
used.
Adding a resistor in series with C
AMP
will increase control
loop damping in response to load transients as shown in
Figures 26 and 27, where 1430 W was added in series with
the 1.8 nF C
AMP
(Adaptive Voltage Positioning not used).
Figure 26. Converter Output and COMP Response to
a Load Step (No Droop). 0 W in Series with C
AMP
Figure 27. Converter Output and COMP Response to
a Load Step (No Droop), Resistance in Series with
C
AMP
Current
LOAD CURRENT, 60 A/DIV
LOAD CURRENT, 60 A/DIV
OUTPUT VOLTAGE, 50 mV/DIV
OUTPUT VOLTAGE, 50 mV/DIV
COMP VOLTAGE, 100 mV/DIV
COMP VOLTAGE, 100 mV/DIV
20 mS/DIV
20 mS/DIV
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27
8. Adaptive Voltage Positioning
Two resistors program the Adaptive Voltage Positioning
(AVP): R
FB
and R
DRP
. These components form a resistor
divider, shown in Figures 28 and 29, between V
DRP
, V
FB
,
and V
OUT
.
+
+
S
R
CS1
CS1P
C
CS1
L1
0 A
G
VDRP
+
R
CSx
CSxP
C
CSx
Lx
0 A
G
VDRP
COMP
Error
Amp
VID 19 mV
R
DRP
R
FB
V
DRP
= VID 19 mV
V
FB
= VID 19 mV V
CORE
I
DRP
= 0 I
FB
= 0
V
CORE
= VID 19 mV + IBIAS
VFB
w R
FB
Figure 28. AVP Circuitry at NoLoad
+
CS1N
CSxN
+
+
S
R
CS1
CS1P
C
CS1
L1
I
MAX
/n
G
VDRP
+
R
CSx
CSxP
C
CSx
Lx
I
MAX
/n
G
VDRP
COMP
Error
Amp
VID 19 mV
R
DRP
R
FB
V
DRP
= VID 19 mV +
I
MAX
R
L
G
VDRP
V
FB
= VID 19 mV V
CORE
I
DRP
I
FB
V
CORE
= VID 19 mV I
DRP
w R
FB
Figure 29. AVP Circuitry at FullLoad
I
DRP
= I
MAX
R
L
G
VDRP
/R
DRP
I
FB
= I
DRP
= VID 19 mV I
MAX
w R
L
w G
VDRP
w R
FB
/R
DRP
+
CS1N
CSxN

NCP5318FTR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Switching Controllers 2/3/4 Phase Buck CPU
Lifecycle:
New from this manufacturer.
Delivery:
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