NTHS5441T1G Datasheet NTHS5441T1G, NTHS5441PT1G | P1-P3

July, 2005 − Rev. 13

1 Publication Order Number:

NTHS5441T1/D

NTHS5441

Power MOSFET

−20 V, −5.3 A, P−Channel ChipFET]

Features

• Low R

DS(on)

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

• Miniature ChipFET Surface Mount Package

• Pb−Free Package is Available

Applications

• Power Management in Portable and Battery−Powered Products; i.e.,

Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

Rating

Symbol 5 sec

Steady

State

Unit

Drain−Source Voltage V

DS

−20 V

Gate−Source Voltage V

GS

"12 V

Continuous Drain Current

(T

J

= 150°C) (Note 1)

T

A

= 25°C

T

A

= 85°C

I

D

−5.3

−3.8

−3.9

−2.8

A

Pulsed Drain Current I

DM

"20 A

Continuous Source Current

(Note 1)

I

S

−5.3 −3.9 A

Maximum Power Dissipation

(Note 1)

T

A

= 25°C

T

A

= 85°C

P

D

2.5

1.3

0.7

W

Operating Junction and Storage

Temperature Range

T

J

, T

stg

−55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq

[1 oz] including traces).

Device Package Shipping

†

ORDERING INFORMATION

NTHS5441T1 ChipFET 3000/Tape & Ree

l

G

S

D

P−Channel MOSFET

http://onsemi.com

−20 V

46 mW @ −4.5 V

R

DS(on)

TYP

−5.3 A

I

D

MAXV

(BR)DSS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

s

Brochure, BRD8011/D.

NTHS5441T1G

ChipFET

(Pb−Free)

3000/Tape & Ree

l

S

D

G

D

1

2

3

45

6

7

8

CONNECTIONS

ChipFET

CASE 1206A

STYLE 1

MARKING

DIAGRAM

A3

M

G

A3 = Specific Device Code

M = Month Code

G = Pb−Free Package

(Note: Microdot may be in either location)

1

2

3

4

8

7

6

5

1

8

NTHS5441

http://onsemi.com

2

THERMAL CHARACTERISTICS

Characteristic Symbol Typ Max Unit

Maximum Junction−to−Ambient (Note 2)

t v 5 sec

Steady State

R

q

JA

40

80

50

95

°C/W

Maximum Junction−to−Foot (Drain)

Steady State

R

q

JF

15 20 °C/W

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Characteristic

Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= −250 mA

−0.6 −1.2 V

Gate−Body Leakage I

GSS

V

DS

= 0 V, V

GS

= "12 V "100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= −16 V, V

GS

= 0 V −1.0 mA

V

DS

= −16 V, V

GS

= 0 V,

T

J

= 85°C

−5.0

On−State Drain Current (Note 3) I

D(on)

V

DS

v −5.0 V, V

GS

= −4.5 V −20 A

Drain−Source On−State Resistance (Note 3) r

DS(on)

V

GS

= −3.6 V, I

D

= −3.7 A

V

GS

= −4.5 V, I

D

= −3.9 A

−

0.050

0.046

0.06

−

W

V

GS

= −2.5 V, I

D

= −3.1 A 0.070 0.083

Forward Transconductance (Note 3) g

fs

V

DS

= −10 V, I

D

= −3.9 A 12 mhos

Diode Forward Voltage (Note 3) V

SD

I

S

= −2.1 A, V

GS

= 0 V −0.8 −1.2 V

Dynamic (Note 4)

Total Gate Charge Q

G

V

DS

= −10 V, V

GS

= −4.5 V,

I

D

= −3.9 A

9.7 22

nC

Gate−Source Charge Q

GS

1.2

Gate−Drain Charge Q

GD

3.6

Input Capacitance C

iss

V

DS

= −5.0 Vdc, V

GS

= 0 Vdc,

f = 1.0 MHz

710

pF

Output Capacitance C

oss

400

Reverse Transfer Capacitance C

rss

140

Turn−On Delay Time t

d(on)

V

DD

= −10 V, R

L

= 10 W

I

D

^ −1.0 A, V

GEN

= −4.5 V,

R

G

= 6 W

14 30

ns

Rise Time t

r

22 55

Turn−Off Delay Time t

d(off)

42 100

Fall Time t

f

35 70

Source−Drain Reverse Recovery Time t

rr

I

F

= −1.1 A, di/dt = 100 A/ms

30 60

2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4. Guaranteed by design, not subject to production testing.

NTHS5441

http://onsemi.com

3

TYPICAL ELECTRICAL CHARACTERISTICS

125°C

−2.5 V

0

20

2.5

16

12

31.51

−V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−I

D,

DRAIN CURRENT (AMPS)

8

4

0

0.5

Figure 1. On−Region Characteristics

0

20

16

1.512

12

8

4

0.5

0

2.5

3

Figure 2. Transfer Characteristics

−V

GS

, GATE−TO−SOURCE VOLTAGE (VOLTS)

0

0.05

24

0.15

0.1

0

5

Figure 3. On−Resistance versus

Gate−to−Source Voltage

−V

GS

, GATE−TO−SOURCE VOLTAGE (VOLTS)

R

DS(on),

DRAIN−TO−SOURCE RESISTANCE (W)

−I

D,

DRAIN CURRENT (AMPS)

2182

0

1410

0.15

0.1

6

0.05

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

−I

D,

DRAIN CURRENT (AMPS)

−50 0−25 25

1.4

1.2

1

0.8

0.6

50 125100

Figure 5. On−Resistance Variation with

Temperature

T

J

, JUNCTION TEMPERATURE (°C)

T

J

= 25°C

V

GS

= −1.5 V

0.2

13

T

J

= −55°C

I

D

= −3.9 A

T

J

= 25°C

0.2

0

75 150

T

J

= 25°C

V

GS

= 2.5 V

I

D

= −3.9 A

V

GS

= −4.5 V

R

DS(on),

DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

2

−2 V

−3 V

−3.5 V−5 V

−4.5 V

−4 V

25°C

R

DS(on),

DRAIN−TO−SOURCE RESISTANCE (W)

1.6

V

GS

= 3.6 V

V

GS

= 4.5 V

NTHS5441T1G

NTHS5441T1G

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