NTHS5441T1G

NTHS5441
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TYPICAL ELECTRICAL CHARACTERISTICS
8124016
1200
900
600
300
0
20
−V
DS
, DRAIN−TO−SOURCE VOLTAGE ()
Figure 6. Capacitance Variation
C, CAPACITANCE (pF)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
Q
G
, TOTAL GATE CHARGE (nC)
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
T
J
= 25°C
V
GS
= 0
C
oss
C
iss
C
rss
1500
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
1
2
3
4
5
012345678910
0
1
2
3
4
5
6
7
8
9
10
11
Q
G
Q
GD
Q
GS
I
D
= −3.9 A
T
J
= 25°C
Q
GD
/Q
GS
= 3.0
0.0001 1
0.01
100.10.01
SQUARE WAVE PULSE DURATION (sec)
0.1
1
0.001
Figure 8. Normalized Thermal Transient Impedance, Junction−to−Ambient
Duty Cycle = 0.5
100 100
0
NORMALIZED EFFECTIVE TRANSIENT
THERMAL IMPEDANCE
0.2
Single Pulse
0.1
0.05
0.02
PER UNIT BASE = R
q
JA
= 80°C/W
T
JM
− T
A
= P
DM
Z
q
JA
(t)
SURFACE MOUNTED
P
DM
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Figure 9. Diode Forward Voltage versus
Current
0.30.1 0.5 0.7 0.9
5
3
2
1
0
−I
S
, SOURCE CURRENT (AMPS)
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
V
GS
= 0 V
T
J
= 25°C
4
NTHS5441
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5
PACKAGE DIMENSIONS
ChipFET]
CASE 1206A−03
ISSUE G
E
A
b
e
e1
D
1234
8765
c
L
1234
8765
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
0.05 (0.002)
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.00 1.05 1.10 0.039
INCHES
b 0.25 0.30 0.35 0.010
c 0.10 0.15 0.20 0.004
D 2.95 3.05 3.10 0.116
E 1.55 1.65 1.70 0.061
e 0.65 BSC
e1 0.55 BSC
L 0.28 0.35 0.42 0.011
0.041 0.043
0.012 0.014
0.006 0.008
0.120 0.122
0.065 0.067
0.025 BSC
0.022 BSC
0.014 0.017
NOM MAX
1.80 1.90 2.00 0.071 0.075 0.079
H
E
5° NOM
q
5° NOM
H
E
q
0.457
0.018
2.032
0.08
0.635
0.025
0.66
0.026
0.711
0.028
ǒ
mm
inches
Ǔ
SCALE 20:1
0.178
0.007
2.032
0.08
1.727
0.068
0.66
0.026
0.711
0.028
ǒ
mm
inches
Ǔ
SCALE 20:1
Styles 1 and 4Basic
0.457
0.018
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NTHS5441
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NTHS5441T1/D
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NTHS5441T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET -20V -5.3A P-Channel
Lifecycle:
New from this manufacturer.
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