2 2017-03-28
AUIRFS4127
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.26mH, R
G
= 25, I
AS
= 44A, V
GS
=10V. Part not recommended for use above this value.
I
SD
44A, di/dt 760A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width 400µs; duty cycle 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
R
is measured at T
J
approximately 90°C.
R
JC
value shown is at time zero.
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 200 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C Reference to 25°C, I
D
= 5mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– 18.6 22
m
V
GS
= 10V, I
D
= 44A
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V V
DS
= V
GS
, I
D
= 250µA
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
= 200V, V
GS
= 0V
––– ––– 250 V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
R
G
Internal Gate Resistance ––– 3.0 –––
nA
gfs Forward Trans conductance 79 ––– ––– S V
DS
= 50V, I
D
= 44A
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge ––– 100 150
nC
I
D
= 44A
Q
gs
Gate-to-Source Charge ––– 30 –––
V
DS
= 100V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 31 –––
V
GS
= 10V
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
) ––– 69 –––
t
d(on)
Turn-On Delay Time ––– 17 –––
ns
V
DD
= 130V
t
r
Rise Time ––– 18 –––
I
D
= 44A
t
d(off)
Turn-Off Delay Time ––– 56 –––
R
G
= 2.7
t
f
Fall Time ––– 22 –––
V
GS
= 10V
C
iss
Input Capacitance ––– 5380 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 410 –––
V
DS
= 50V
C
rss
Reverse Transfer Capacitance ––– 86 –––
ƒ = 1.0 MHz (See Fig. 5)
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) ––– 360 ––– V
GS
= 0V, V
DS
= 0V to 160V
C
oss
eff. (TR) Effective Output Capacitance (Time Related) ––– 590 ––– V
GS
= 0V, V
DS
= 0V to 160V
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 72
A
MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current
––– ––– 300
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 44A, V
GS
= 0V
t
rr
Reverse Recovery Time
––– 136 –––
ns
T
J
= 25°C
––– 139 ––– T
J
= 125°C
Q
rr
Reverse Recovery Charge
––– 458 –––
nC
T
J
= 25°C
––– 688 ––– T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 8.3 ––– A T
J
= 25°C
V
R
= 100V,
I
F
= 44A
di/dt = 100A/µs
