4 2017-03-28
AUIRFS4127
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 11. Typical C
oss
Stored Energy
Fig 12. Maximum Avalanche Energy vs. Drain Current
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
in
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
1 10 100 1000
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
DC
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
20
40
60
80
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Temperature ( °C )
180
200
220
240
260
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
(
V
)
Id = 5mA
0 40 80 120 160 200
V
DS,
Drain-to-Source Voltage (V)
0.0
2.0
4.0
6.0
8.0
E
n
e
r
g
y
(
µ
J
)
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
200
400
600
800
1000
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
8.2A
13A
BOTTOM
44A
Fig 10. Drain-to-Source Breakdown Voltage
5 2017-03-28
AUIRFS4127
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
22a, 22b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. I
av
= Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as 25°C in Figure 14, 15).
t
av
= Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)·
t
av

Fig 14. Avalanche Current vs. Pulse Width
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
50
100
150
200
250
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1% Duty Cycle
I
D
= 44A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
6 2017-03-28
AUIRFS4127
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Stored Charge vs. dif/dt Fig 18. Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 1.0A
I
D
= 1.0mA
I
D
= 250µA
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / µs)
0
10
20
30
40
50
I
R
R
M
-
(
A
)
I
F
= 29A
V
R
= 100V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / µs)
0
10
20
30
40
50
60
I
R
R
M
-
(
A
)
I
F
= 44A
V
R
= 100V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / µs)
0
500
1000
1500
2000
2500
3000
Q
R
R
-
(
n
C
)
I
F
= 29A
V
R
= 100V
T
J
= 125°C
T
J
= 25°C
Fig 17. Typical Recovery Current vs. dif/dt
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / µs)
0
500
1000
1500
2000
2500
3000
Q
R
R
-
(
n
C
)
I
F
= 44A
V
R
= 100V
T
J
= 125°C
T
J
= 25°C

AUIRFS4127

Mfr. #:
Manufacturer:
Infineon / IR
Description:
MOSFET N-CHANNEL 100+
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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