NVF5P03T3G

Publication Order Number:
NTF5P03T3/D
© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 6
1
NTF5P03, NVF5P03
Power MOSFET
-5.2 A, -30 V
PChannel SOT223
Features
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature SOT223 Surface Mount Package
Avalanche Energy Specified
AECQ101 Qualified and PPAP Capable NVF5P03T3G
These Devices are PbFree and are RoHS Compliant
Applications
DCDC Converters
Power Management
Motor Controls
Inductive Loads
Replaces MMFT5P03HD
1
2
3
4
5.2 AMPERES, 30 VOLTS
R
DS(on)
= 100 mW
Device Package Shipping
ORDERING INFORMATION
SOT223
CASE 318E
STYLE 3
MARKING
DIAGRAM
& PIN
ASSIGNMENT
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
5P03 G
A = Assembly Location
Y = Year
M = Date Code
5P03 = Specific Device Code
G = PbFree Package
AYM
1
Gate
2
Drain
3
Source
Drain
4
(Note: Microdot may be in either location)
SOT223
(PbFree)
NTF5P03T3G
4000 / Tape &
Reel
G
G
S
D
PChannel MOSFET
SOT223
(PbFree)
NVF5P03T3G
4000 / Tape &
Reel
NTF5P03, NVF5P03
http://onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Negative sign for PChannel devices omitted for clarity
Rating Symbol Max Unit
DraintoSource Voltage V
DSS
30 V
DraintoGate Voltage (R
GS
= 1.0 MW)
V
DGR
30 V
GatetoSource Voltage Continuous V
GS
± 20 V
1 sq in
FR4 or G10 PCB
10 seconds
Thermal Resistance Junction to Ambient
Total Power Dissipation @ T
A
= 25°C
Linear Derating Factor
Drain Current Continuous @ T
A
= 25°C
Continuous @ T
A
= 70°C
Pulsed Drain Current (Note 1)
R
THJA
P
D
I
D
I
D
I
DM
40
3.13
25
5.2
4.1
26
°C/W
Watts
mW/°C
A
A
A
Minimum
FR4 or G10 PCB
10 seconds
Thermal Resistance Junction to Ambient
Total Power Dissipation @ T
A
= 25°C
Linear Derating Factor
Drain Current Continuous @ T
A
= 25°C
Continuous @ T
A
= 70°C
Pulsed Drain Current (Note 1)
R
THJA
P
D
I
D
I
D
I
DM
80
1.56
12.5
3.7
2.9
19
°C/W
Watts
mW/°C
A
A
A
Operating and Storage Temperature Range T
J
, T
stg
55 to 150 °C
Single Pulse DraintoSource Avalanche Energy Starting T
J
= 25°C
(V
DD
= 30 Vdc, V
GS
= 10 Vdc, Peak I
L
= 12 Apk, L = 3.5 mH, R
G
= 25 W)
E
AS
250
mJ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Repetitive rating; pulse width limited by maximum junction temperature.
NTF5P03, NVF5P03
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Cpk 2.0) (Notes 2 and 4)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
30
28
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 24 Vdc, V
GS
= 0 Vdc)
(V
DS
= 24 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
1.0
25
mAdc
GateBody Leakage Current
(V
GS
= ± 20 Vdc, V
DS
= 0 Vdc)
I
GSS
± 100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Cpk 2.0) (Notes 2 and 4)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.75
3.5
3.0
Vdc
mV/°C
Static DraintoSource OnResistance (Cpk 2.0) (Notes 2 and 4)
(V
GS
= 10 Vdc, I
D
= 5.2 Adc)
(V
GS
= 4.5 Vdc, I
D
= 2.6Adc)
R
DS(on)
76
107
100
150
mW
Forward Transconductance (Note 2)
(V
DS
= 15 Vdc, I
D
= 2.0 Adc)
g
fs
2.0 3.9 Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 V,
f = 1.0 MHz)
C
iss
500 950
pF
Output Capacitance C
oss
153 440
Transfer Capacitance C
rss
58 140
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
(V
DD
= 15 Vdc, I
D
= 4.0 Adc,
V
GS
= 10 Vdc,
R
G
= 6.0 W) (Note 2)
t
d(on)
10 24
ns
Rise Time t
r
33 48
TurnOff Delay Time t
d(off)
38 94
Fall Time t
f
20 92
TurnOn Delay Time
(V
DD
= 15 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc,
R
G
= 6.0 W) (Note 2)
t
d(on)
16 38
ns
Rise Time t
r
45 110
TurnOff Delay Time t
d(off)
23 60
Fall Time t
f
24 80
Gate Charge (V
DS
= 24 Vdc, I
D
= 4.0 Adc,
V
GS
= 10 Vdc) (Note 2)
Q
T
15 38
nC
Q
1
1.6
Q
2
3.5
Q3 2.6
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (I
S
= 4.0 Adc, V
GS
= 0 Vdc)
(I
S
= 4.0 Adc, V
GS
= 0 Vdc,
T
J
= 125°C) (Note 2)
V
SD
1.1
0.89
1.5
Vdc
Reverse Recovery Time (I
S
= 4.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 2)
t
rr
34
ns
t
a
20
t
b
14
Reverse Recovery Stored Charge Q
RR
0.036
mC
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
3. Switching characteristics are independent of operating junction temperatures.
4. Reflects typical values.
Cpk +
Ť
Max limit * Typ
3 SIGMA
Ť

NVF5P03T3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET AUTOMOTIVE MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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