NTF5P03, NVF5P03
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
LIMIT
100
1
0.1
0.01
1000
100
10
12.5
5.0
2.5
0
DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R
G
, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage versus Current
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
−I
S
, SOURCE CURRENT (A)
t, TIME (ns)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
−I
D
, DRAIN CURRENT (AMPS)
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
0504020 60
1 10 100
0.1 10 1001
I
D
= −2 A
T
J
= 25°C
−V
GS
C
iss
C
oss
C
rss
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
V
DD
= −15 V
I
D
= −4.0 A
V
GS
= −10 V
V
GS
= 0 V
T
J
= 25°C
I
D
= −6 A
1 ms
100 ms
10 ms
dc
t
r
t
d(off)
t
d(on)
Q
2
Q
1
Q
T
3010
t
f
THERMAL LIMIT
PACKAGE LIMIT
7.5
10
10
−V
DS
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10 ms
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
0
5
10
15
20
25
0
100
200
300
400
500
600
700
800
900
1000
0 5 10 15 20 25 30
T
J
= 25°C
V
GS
= 0 V
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1
0
50
100
150
200
250
25 50 75 100 125 15
