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PDTD113ZTVL

P1-P3P4-P6P7-P9P10-P10
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
NPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-Mounted
Device (SMD) plastic package.
PNP complement: PDTB113ZT.
1.2 Features
1.3 Applications
1.4 Quick reference data
PDTD113ZT
NPN 500 mA, 50 V resistor-equipped transistor;
R1 = 1 kΩ, R2 = 10 kΩ
Rev. 02 — 23 March 2009 Product data sheet
n Built-in bias resistors n Reduces component count
n Simplifies circuit design n Reduces pick and place costs
n 500 mA output current capability n ±10 % resistor ratio tolerance
n Digital application in automotive and
industrial segments
n Cost-saving alternative for BC817 series
in digital applications
n Controlling IC inputs n Switching loads
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - 50 V
I
O
output current - - 500 mA
R1 bias resistor 1 (input) 0.7 1 1.3 kΩ
R2/R1 bias resistor ratio 9 10 11
PDTD113ZT_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 23 March 2009 2 of 9
NXP Semiconductors
PDTD113ZT
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 input (base)
2 GND (emitter)
3 output (collector)
12
3
sym007
3
2
1
R1
R2
Table 3. Ordering information
Type number Package
Name Description Version
PDTD113ZT - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
PDTD113ZT *7V
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 5 V
V
I
input voltage
positive - +10 V
negative - −5V
I
O
output current - 500 mA
P1-P3P4-P6P7-P9P10-P10

PDTD113ZTVL

Mfr. #:
Buy PDTD113ZTVL
Manufacturer:
Nexperia
Description:
Bipolar Transistors - Pre-Biased PDTD113ZT/TO-236AB/REEL 11" Q3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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