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PDTD113ZTVL

P1-P3P4-P6P7-P9P10-P10
PDTD113ZT_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 23 March 2009 3 of 9
NXP Semiconductors
PDTD113ZT
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 250 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=40V; I
E
= 0 A - - 100 nA
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter cut-off
current
V
CE
=50V; I
B
= 0 A - - 0.5 µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 0.8 mA
h
FE
DC current gain V
CE
=5V; I
C
=50mA 70 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 50 mA; I
B
= 2.5 mA - - 0.3 V
V
I(off)
off-state input voltage V
CE
=5V; I
C
= 100 µA 0.3 0.6 1 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 20 mA 0.4 0.8 1.4 V
R1 bias resistor 1 (input) 0.7 1 1.3 kΩ
R2/R1 bias resistor ratio 9 10 11
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f = 100 MHz
-7-pF
PDTD113ZT_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 23 March 2009 4 of 9
NXP Semiconductors
PDTD113ZT
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
V
CE
=5V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
V
CE
= 0.3 V
(1) T
amb
= −40 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
V
CE
=5V
(1) T
amb
= −40 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
Fig 4. Off-state input voltage as a function of
collector current; typical values
006aaa314
10
2
10
10
3
h
FE
1
I
C
(mA)
10
−1
10
3
10
2
110
(1)
(2)
(3)
006aaa315
I
C
(mA)
110
3
10
2
10
10
−1
V
CEsat
(V)
10
−2
(1)
(2)
(3)
006aaa316
I
C
(mA)
10
−1
10
3
10
2
110
1
10
V
I(on)
(V)
10
−1
(1)
(2)
(3)
006aaa317
I
C
(mA)
10
−1
101
1
V
I(off)
(V)
10
−1
(1)
(2)
(3)
PDTD113ZT_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 23 March 2009 5 of 9
NXP Semiconductors
PDTD113ZT
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 13.
Fig 5. Package outline SOT23 (TO-236AB)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PDTD113ZT SOT23 4 mm pitch, 8 mm tape and reel -215 -235
P1-P3P4-P6P7-P9P10-P10

PDTD113ZTVL

Mfr. #:
Buy PDTD113ZTVL
Manufacturer:
Nexperia
Description:
Bipolar Transistors - Pre-Biased PDTD113ZT/TO-236AB/REEL 11" Q3
Lifecycle:
New from this manufacturer.
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