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BSS84,215

P1-P3P4-P6P7-P9P10-P12
BSS84_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 16 December 2008 6 of 11
NXP Semiconductors
BSS84
P-channel enhancement mode vertical DMOS transistor
T
j
=25°CT
j
=25°C
Fig 4. Output characteristics: drain current as a
function of drain-source voltage; typical
values
Fig 5. Drain-source on-state resistance as a function
of drain current; typical values
T
j
=25°C; V
DS
= −10 V (1) I
D
= −130 mA; V
GS
= −10 V
(2) I
D
= −20 mA; V
GS
= −2.4 V
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 7. Normalized drain-source on-state resistance
factor as a function of junction temperature
0 −2 −10 −12
−600
−200
0
−400
mld197
−4 −6 −8
V
DS
(V)
V
GS
= −10 V
−7.5 V
−6 V
−5 V
−4 V
−3 V
−2.5 V
I
D
(mA)
60
0
40
−1
mld198
−10 −10
2
−10
3
20
I
D
(mA)
R
DSon
(Ω)
V
GS
= −2.5 V
−3 V
−7.5 V
−10 V
−5 V
−4 V
0 −2 −4 −10
−600
−200
0
−400
mld196
−6
I
D
(mA)
V
GS
(V)
−8
0.6
1.0
1.4
1.8
0 50 100 150−50
T
j
(°C)
mld194
(1)
(2)
R
DSon
R
DSon(25°C)
BSS84_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 16 December 2008 7 of 11
NXP Semiconductors
BSS84
P-channel enhancement mode vertical DMOS transistor
8. Test information
I
D
= −1 mA; V
DS
=V
GS
V
GS
= 0 V; f = 1 MHz
Fig 8. Gate-source threshold voltage as a function of
junction temperature
Fig 9. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
0.6
0.8
1.0
1.2
0 50 100 150
mld195
−50
T
j
(°C)
V
GSth
V
GSth(25°C)
0
80
60
40
20
0
−10 −20 −30
mld191
C
(pF)
V
DS
(V)
C
iss
C
oss
C
rss
Fig 10. Switching time test circuit Fig 11. Input and output waveforms
mld189
50 Ω
V
DS
= −40 V
I
D
0 V
−10 V
mbb690
10 %
90 %
90 %
10 %
t
on
t
off
OUTPUT
INPUT
BSS84_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 16 December 2008 8 of 11
NXP Semiconductors
BSS84
P-channel enhancement mode vertical DMOS transistor
9. Package outline
Fig 12. Package outline SOT23 (TO-236AB)
UNIT
A
1
max.
b
p
cD
E
e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
w M
v M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
P1-P3P4-P6P7-P9P10-P12

BSS84,215

Mfr. #:
Buy BSS84,215
Manufacturer:
Nexperia
Description:
MOSFET P-CH DMOS 50V 130MA
Lifecycle:
New from this manufacturer.
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