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FGH40N6S2

P1-P3P4-P6P7-P8
©2003 Fairchild Semiconductor Corporation
August 2003
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and ava-
lanche capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT (co-pack) formerly Developmental Type TA49438
Features
• 100kHz Operation at 390V, 24A
• 200kHZ Operation at 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . .85ns at TJ = 125
o
C
• Low Gate Charge . . . . . . . . . 35nC at V
GE
= 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ
• Low Conduction Loss
Device Maximum Ratings T
C
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
BV
CES
Collector to Emitter Breakdown Voltage 600 V
I
C25
Collector Current Continuous, T
C
= 25°C 75 A
I
C110
Collector Current Continuous, T
C
= 110°C 35 A
I
CM
Collector Current Pulsed (Note 1) 180 A
V
GES
Gate to Emitter Voltage Continuous ±20 V
V
GEM
Gate to Emitter Voltage Pulsed ±30 V
SSOA Switching Safe Operating Area at T
J
= 150°C, Figure 2 100A at 600V
E
AS
Pulsed Avalanche Energy, I
CE
= 30A, L = 1mH, V
DD
= 50V 260 mJ
P
D
Power Dissipation Total T
C
= 25°C 290 W
Power Dissipation Derating T
C
> 25°C 2.33 W/°C
T
J
Operating Junction Temperature Range -55 to 150 °C
T
STG
Storage Junction Temperature Range -55 to 150 °C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Package Symbol
C
E
G
TO-247 E
C
G
TO-263AB
TO-220AB
E
C
G
E
G
COLLECTOR
(Flange)
COLLECTOR
(Back-Metal)
©2003 Fairchild Semiconductor Corporation FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
40N6S2 FGH40N6S2 TO-247 Tube N/A 30
40N6S2 FGP40N6S2 TO-220AB Tube N/A 50
40N6S2 FGB40N6S2 TO-263AB Tube N/A 50
40N6S2 FGB40N6S2T TO-263AB 330mm 24mm 800
Symbol Parameter Test Conditions Min Typ Max Units
BV
CES
Collector to Emitter Breakdown Voltage I
C
= 250µA, V
GE
= 0 600 - - V
BV
ECS
Emitter to Collector Breakdown Voltage I
C
= -10mA, V
GE
= 0 20 - - V
I
CES
Collector to Emitter Leakage Current V
CE
= 600V T
J
= 25°C--250µA
T
J
= 125°C--2.0mA
I
GES
Gate to Emitter Leakage Current V
GE
= ± 20V - - ±250 nA
V
CE(SAT)
Collector to Emitter Saturation Voltage I
C
= 20A,
V
GE
= 15V
T
J
= 25°C-1.92.7V
T
J
= 125°C-1.72.0V
Q
G(ON)
Gate Charge I
C
= 20A,
V
CE
= 300V
V
GE
= 15V - 35 42 nC
V
GE
= 20V - 45 55 nC
V
GE(TH)
Gate to Emitter Threshold Voltage I
C
= 250µA, V
CE
= V
GE
3.5 4.3 5.0 V
V
GEP
Gate to Emitter Plateau Voltage I
C
= 20A, V
CE
= 300V - 6.5 8.0 V
SSOA Switching SOA T
J
= 150°C, V
GE
= 15V, R
G
= 3Ω
L = 100µH, V
CE
= 600V
100 - - A
t
d(ON)I
Current Turn-On Delay Time IGBT and Diode at T
J
= 25°C,
I
CE
= 20A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3Ω
L = 200µH
Test Circuit - Figure 26
-8.0-ns
t
rI
Current Rise Time - 10 - ns
t
d(OFF)I
Current Turn-Off Delay Time - 35 - ns
t
fI
Current Fall Time - 55 - ns
E
ON1
Turn-On Energy (Note 2) - 115 - µJ
E
ON2
Turn-On Energy (Note 2) - 200 - µJ
E
OFF
Turn-Off Energy (Note 3) - 195 260 µJ
t
d(ON)I
Current Turn-On Delay Time IGBT and Diode at T
J
= 125°C
I
CE
= 20A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3Ω
L = 200µH
Test Circuit - Figure 26
-14-ns
t
rI
Current Rise Time - 18 - ns
t
d(OFF)I
Current Turn-Off Delay Time - 68 85 ns
t
fI
Current Fall Time - 85 105 ns
E
ON1
Turn-On Energy (Note 2) - 115 - µJ
E
ON2
Turn-On Energy (Note 2) - 380 450 µJ
E
OFF
Turn-Off Energy (Note 3) - 375 600 µJ
R
θJC
Thermal Resistance Junction-Case TO-247 - - 0.43 °C/W
NOTE:
2.
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss
of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in figure 26.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
©2003 Fairchild Semiconductor Corporation FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Typical Performance Curves T
J
= 25°C unless otherwise noted
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECTOR CURRENT (A)
50
10
0
20
25 75 100 125 150
90
40
60
30
50
PACKAGE LIMITED
80
70
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
7000
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
300 400200100 500 600
0
50
75
25
125
T
J
= 150
o
C, R
G
= 3Ω, V
GE
= 15V, L = 100µH
100
f
MAX
, OPERATING FREQUENCY (kHz)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
100
6010 30
1000
10
T
J
= 125
o
C, R
G
= 3Ω, L = 200µH, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
θJC
= 0.27
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
C =
75
o
C
V
GE
= 10V
V
GE
= 15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
91112 15
9
5
300
500
t
SC
I
SC
450
13 14
11
13
7
250
350
400
10 16
3
V
CE
= 390V, R
G
= 3Ω, T
J
= 125
o
C
0.0 0.4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
5
10
0.6 1.2 1.4
20
15
40
T
J
= 25
o
C
0.2
25
0.8 1.0
T
J
= 125
o
C
T
J
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
=10V
PULSE DURATION = 250µs
35
30
1.6 1.8 2.0 2.2 2.4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
=15V
PULSE DURATION = 250µs
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
0
5
10
20
15
40
25
35
30
0.0 0.4 0.6 1.2 1.40.2 0.8 1.0 1.6 1.8 2.0 2.2 2.4
P1-P3P4-P6P7-P8

FGH40N6S2

Mfr. #:
Buy FGH40N6S2
Manufacturer:
ON Semiconductor
Description:
IGBT 600V 75A 290W TO247
Lifecycle:
New from this manufacturer.
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