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FGH40N6S2

P1-P3P4-P6P7-P8
©2003 Fairchild Semiconductor Corporation FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves T
J
= 25°C unless otherwise noted
E
ON2
, TURN-ON ENERGY LOSS (µJ)
600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
400
800
0
10 20 25 30 35 400
1200
1000
200
1400
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 3Ω, L = 200µH, V
CE
= 390V
515
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
600
400
800
0
1000
1400
200
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
10 20 25 30 35 4005 15
R
G
= 3Ω, L = 200µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(ON)I
, TURN-ON DELAY TIME (ns)
0
4
8
12
16
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
20
10 20 25 30 35 4005 15
R
G
= 3Ω, L = 200µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
, RISE TIME (ns)
0
30
10
60
50
40
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
=15V
20
10 20 25 30 35 4005 15
R
G
= 3Ω, L = 200µH, V
CE
= 390V
40
20
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
70
60
50
V
GE
= 10V, V
GE
= 15V, T
J
= 125
o
C
80
10 20 25 30 35 4005 15
R
G
= 3Ω, L = 200µH, V
CE
= 390V
V
GE
= 10V, V
GE
= 15V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, FALL TIME (ns)
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
10 20 25 30 35 4005 15
R
G
= 3Ω, L = 200µH, V
CE
= 390V
60
40
50
90
80
70
100
©2003 Fairchild Semiconductor Corporation FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Figure 13. Transfer Characteristic Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves T
J
= 25°C unless otherwise noted
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
25
50
5678 12
V
GE
, GATE TO EMITTER VOLTAGE (V)
9
75
150
175
3
125
100
200
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
CE
= 10V
TJ = -55
o
C
TJ = 25
o
C
TJ = 125
o
C
41110
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
2
10
0
6
I
G(REF)
= 1mA, R
L
= 15Ω
V
CE
= 200V
4
8
12
V
CE
= 600V
5 1015200
V
CE
= 400V
14
16
25 30 35
I
CE
= 10A
0
1.2
50 75 100
T
C
, CASE TEMPERATURE (
o
C)
1.6
12525 150
2.4
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
2.0
I
CE
= 40A
I
CE
= 20A
0.8
0.4
E
TOTAL
= E
ON2
+ E
OFF
R
G
= 3Ω, L = 200µH, V
CE
= 390V, V
GE
= 15V
0.1
10 100
R
G
, GATE RESISTANCE (Ω)
1.0 1000
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 10A
I
CE
= 20A
I
CE
= 40A
T
J
= 125
o
C, L = 200µH, V
CE
= 390V, V
GE
= 15V
100
10
1
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
C
RES
02040
0.0
1.0
3.0
2.5
FREQUENCY = 1MHz
C
OES
C
IES
60 80 100
0.5
1.5
2.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
1.6
9
2.0
2.8
2.4
8 101112 16
3.2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
= 40A
PULSE DURATION = 250µs
3.6
7131415
DUTY CYCLE < 0.5%
4.0
I
CE
= 10A
I
CE
= 20A
©2003 Fairchild Semiconductor Corporation FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Typical Performance Curves T
J
= 25°C unless otherwise noted
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θJC
, NORMALIZED THERMAL RESPONSE
10
-2
10
-1
10
o
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.10
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θJC
X R
θJC
) + T
C
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
Test Circuit and Waveforms
Figure 20. Inductive Switching Test Circuit
Figure 21. Switching Test Waveforms
R
G
= 3Ω
L = 200µH
V
DD
= 390V
+
-
FGH40N6S2D
DIODE TA49391
FGH40N6S2
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
P1-P3P4-P6P7-P8

FGH40N6S2

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Buy FGH40N6S2
Manufacturer:
ON Semiconductor
Description:
IGBT 600V 75A 290W TO247
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New from this manufacturer.
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