This is information on a product in full production.
November 2015 DocID14749 Rev 2 1/10
STTH1R04
Ultrafast recovery diode
Datasheet
-
production data
Features
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
Description
The STTH1R04 series uses ST's new 400 V
planar Pt doping technology. The STTH1R04 is
specially suited for switching mode base drive
and transistor circuits.
Packaged in axial and surface mount packages,
this device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
KA
DO-41
STTH1R04
DO-15
STTH1R04Q
SMA
STTH1R04A
SMB
STTH1R04U
Band indicates cathode side.
Table 1. Device summary
I
F(AV)
1 A
V
RRM
400 V
T
j (max)
175 °C
V
F (typ)
0.9 V
t
rr (typ)
14 ns
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Characteristics STTH1R04
2/10 DocID14749 Rev 2
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.9 x I
F(AV)
+ 0.250 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 400 V
I
F(AV)
Average forward current, δ = 0.5
DO-41 T
lead
= 100 °C
1.0 A
DO-15 T
lead
= 105 °C
SMA T
lead
= 125 °C
SMB T
lead
= 140 °C
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 30 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(1)
1. On infinite heatsink with 10 mm lead length
175 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
Lead length = 10 mm
on infinite heatsink
DO-41 55
°C/W
DO-15 50
R
th(j-l)
Junction to lead
SMA 35
SMB 25
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min Typ Max Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2 %
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
5
µA
T
j
= 125 °C 5 50
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2 %
Forward voltage drop
T
j
= 25 °C
I
F
= 1.0 A
1.5
VT
j
= 100 °C 1.0 1.25
T
j
= 150 °C 0.9 1.15
DocID14749 Rev 2 3/10
STTH1R04 Characteristics
10
Table 5. Dynamic characteristics (T
j
= 25 °C unless otherwise stated)
Symbol Parameter
Test conditions
Min Typ Max Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25 °C
30
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25 °C
14 20
I
RM
Reverse recovery current
I
F
= 1 A, dI
F
/dt = -200 A/µs,
V
R
= 320 V, T
j
= 125 °C
2.5 3.5 A
t
fr
Forward recovery time
I
F
= 1 A dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25 °C
50 ns
V
FP
Forward recovery voltage
I
F
= 1 A dI
F
/dt = 100 A/µs
3.5 V
Figure 1. Conduction losses versus
average forward current
Figure 2. Forward voltage drop versus forward
current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0 0.2 0.4 0.6 0.8 1.0 1.2
P(W)
δ=0.05
δ=0.1 δ=0.2
δ=0.5
δ=1
T
δ
=tp/T
tp
I
F(AV)
(A)
0
5
10
15
20
25
30
35
40
45
50
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
I
FM
(A)
T
J
=150°C
(Maximum values)
T
J
=150°C
(Maximum values)
T
J
=150°C
(Typical values)
T
J
=150°C
(Typical values)
T
J
=25°CT
J
=25°C
(Maximum values)
V
FM
(V)
Figure 3. Relative variation of thermal
impedance junction to lead
versus pulse duration (DO-41)
Figure 4. Relative variation of thermal
impedance junction to lead
versus pulse duration (DO-15)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j -a)
/R
th(j -a)
Single pulse
DO-41
L
leads
=10mm
t
P
(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j -a)
/R
th(j -a)
Single pulse
DO-1 5
L
leads
=10mm
t
P
(s)

STTH1R04A

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers Ultrafast recovery Diode
Lifecycle:
New from this manufacturer.
Delivery:
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