Characteristics STTH1R04
4/10 DocID14749 Rev 2
Figure 5. Relative variation of thermal
impedance junction to lead
versus pulse duration, SMA
Figure 6. Relative variation of thermal
impedance junction to lead
versus pulse duration, SMB
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j -a)
/R
th(j -a)
Single pulse
SMA
S
cu
=1cm2
t
P
(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a )
Single pulse
SMB
S
cu
=1cm²
t
P
(s)
Figure 7. Junction capacitance versus
reverse voltage applied (typical values)
Figure 8. Reverse recovery charges versus
dI
F
/dt (typical values)
1
10
100
1 10 100 1000
C(pF)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V
R
(V)
0
4
8
12
16
20
24
28
32
36
40
10 100 1000
Q
RR
(nC)
I
F
= 1 A
V
R
=320 V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)
Figure 9. Reverse recovery time versus
dI
F
/dt (typical values)
Figure 10. Peak reverse recovery current
versus dI
F
/dt (typical values)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
10 100 1000
t
RR
(ns)
I
F
= 1 A
V
R
=320 V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10 100 1000
I
RM
(A)
I
F
= 1 A
V
R
=320 V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)
