74HC_HCT1G32_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 8 August 2012 4 of 12
NXP Semiconductors 74HC1G32-Q100; 74HCT1G32-Q100
2-input OR gate
9. Recommended operating conditions
10. Static characteristics
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 74HC1G32-Q100 74HCT1G32-Q100 Unit
Min Typ Max Min Typ Max
V
CC
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
V
I
input voltage 0 - V
CC
0-V
CC
V
V
O
output voltage 0 - V
CC
0-V
CC
V
T
amb
ambient temperature 40 +25 +125 40 +25 +125 C
t/V input transition rise
and fall rate
V
CC
= 2.0 V - - 625 - - - ns/V
V
CC
= 4.5 V - - 139 - - 139 ns/V
V
CC
= 6.0 V - - 83 - - - ns/V
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
=25
C.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
74HC1G32-Q100
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V 1.5 1.2 - 1.5 - V
V
CC
= 4.5 V 3.15 2.4 - 3.15 - V
V
CC
= 6.0 V 4.2 3.2 - 4.2 - V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V - 0.8 0.5 - 0.5 V
V
CC
= 4.5 V - 2.1 1.35 - 1.35 V
V
CC
= 6.0 V - 2.8 1.8 - 1.8 V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V 1.9 2.0 - 1.9 - V
I
O
= 20 A; V
CC
= 4.5 V 4.4 4.5 - 4.4 - V
I
O
= 20 A; V
CC
= 6.0 V 5.9 6.0 - 5.9 - V
I
O
= 2.0 mA; V
CC
= 4.5 V 4.13 4.32 - 3.7 - V
I
O
= 2.6 mA; V
CC
= 6.0 V 5.63 5.81 - 5.2 - V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V - 0 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 6.0 V - 0 0.1 - 0.1 V
I
O
= 2.0 mA; V
CC
= 4.5 V - 0.15 0.33 - 0.4 V
I
O
= 2.6 mA; V
CC
= 6.0 V - 0.16 0.33 - 0.4 V
I
I
input leakage current V
I
=V
CC
or GND; V
CC
= 6.0 V - - 1.0 - 1.0 A
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A;
V
CC
=6.0V
--10 - 20A
C
I
input capacitance - 1.5 - - - pF
