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IPI80N04S204AKSA2

P1-P3P4-P6P7-P8
IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
OptiMOS
®
Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
D
T
C
=25 °C, V
GS
=10 V
80 A
T
C
=100 °C,
V
GS
=10 V
2)
80
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
320
Avalanche energy, single pulse
2)
E
AS
I
D
=80A
810 mJ
Gate source voltage
4)
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
300 W
Operating and storage temperature
T
j
, T
stg
-55 ... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
V
DS
40 V
R
DS(on),max
(SMD version) 3.4
mΩ
I
D
80 A
Product Summary
PG-TO220-3-1 PG-TO262-3-1PG-TO263-3-2
Type Package Ordering Code Marking
IPB80N04S2-04 PG-TO263-3-2 SP0002-18154 2N0404
IPP80N04S2-04 PG-TO220-3-1 SP0002-19054 2N0404
IPI80N04S2-04 PG-TO262-3-1 SP0002-19058 2N0404
Rev. 1.0 page 1 2006-03-02
IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
- - 0.5 K/W
Thermal resistance, junction -
ambient, leaded
R
thJA
--62
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
5)
--40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
= 1 mA
40 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250 µA
2.1 3.0 4.0
Zero gate voltage drain current
I
DSS
V
DS
=40 V, V
GS
=0 V,
T
j
=25 °C
- 0.01 1 µA
V
DS
=40 V, V
GS
=0 V,
T
j
=125 °C
2)
- 1 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- 1 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=80 A,
- 2.9 3.7 mΩ
V
GS
=10 V, I
D
=80 A,
SMD version
- 2.6 3.4
Values
Rev. 1.0 page 2 2006-03-02
IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
2)
Input capacitance
C
iss
- 5300 - pF
Output capacitance
C
oss
- 2200 -
Reverse transfer capacitance
C
rss
- 580 -
Turn-on delay time
t
d(on)
-26-ns
Rise time
t
r
-45-
Turn-off delay time
t
d(off)
-56-
Fall time
t
f
-32-
Gate Char
g
e Characteristics
2)
Gate to source charge
Q
gs
-2535nC
Gate to drain charge
Q
gd
-4775
Gate charge total
Q
g
- 127 170
Gate plateau voltage
V
plateau
- 4.9 - V
Reverse Diode
Diode continous forward current
2)
I
S
- - 80 A
Diode pulse current
2)
I
S,pulse
- - 320
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=80 A,
T
j
=25 °C
- 0.9 1.3 V
Reverse recovery time
2)
t
rr
V
R
=20 V, I
F
=I
S
,
di
F
/dt =100 A/µs
-5375ns
Reverse recovery charge
2)
Q
rr
V
R
=20 V, I
F
=I
S
,
di
F
/dt =100 A/µs
- 85 125 nC
1)
Current is limited by bondwire; with an R
thJC
= 0.5K/W the chip is able to carry 208A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=25 V,
f =1 MHz
V
DD
=20 V, V
GS
=10 V,
I
D
=80 A, R
G
=2.2 Ω
V
DD
=32 V, I
D
=80 A,
V
GS
=0 to 10 V
2)
Defined by design. Not subject to production test.
3)
See diagram 13.
4)
Qualified at -20V and +20V.
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0 page 3 2006-03-02
P1-P3P4-P6P7-P8

IPI80N04S204AKSA2

Mfr. #:
Buy IPI80N04S204AKSA2
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 40V 80A TO262-3
Lifecycle:
New from this manufacturer.
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