IPI80N04S204AKSA2

IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
13 Typical avalanche energy 14 Typ. gate charge
E
AS
= f(T
j
) V
GS
= f(Q
gate
); I
D
= 80 A pulsed
parameter: I
D
= 80A
15 Typ. drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
= f(T
j
); I
D
= 1 mA
0
100
200
300
400
500
600
700
800
900
25 75 125 175
T
j
[°C]
E
AS
[mJ]
V
GS
Q
gate
Q
gs
Q
gd
Q
g
V
GS
Q
gate
Q
gs
Q
gd
Q
g
8 V
32 V
0
2
4
6
8
10
12
0 20406080100120
Q
gate
[nC]
V
GS
[V]
36
38
40
42
44
46
48
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
Rev. 1.0 page 7 2006-03-02
IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
Published by
Infineon Technologies AG
St.-Martin-Straße 53
D-81541 München
©
Infineon Technologies AG 2004
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
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Rev. 1.0 page 8 2006-03-02

IPI80N04S204AKSA2

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 40V 80A TO262-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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