ZXTP2009Z
SEMICONDUCTORS
ISSUE 1 - JUNE 2005
2
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
(a)
R
⍜JA
139 °C/W
Junction to ambient
(b)
R
⍜JA
83 °C/W
Junction to ambient
(c)
R
⍜JA
60 °C/W
Junction to ambient
(d)
R
⍜JA
42 °C/W
NOTES
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB measured at t⬍ 5 secs.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
CBO
-50 V
Collector-base voltage BV
CBS
-50 V
Collector-emitter voltage BV
CEO
-40 V
Emitter-base voltage BV
EBO
-7.5 V
Continuous collector current
(b)
I
C
-5.5 A
Peak pulse current I
CM
-15 A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
0.9
7.2
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
1.5
12
W
mW/°C
Power dissipation at T
A
=25°C
(c)
Linear derating factor
P
D
2.1
16.8
W
mW/°C
Power dissipation at T
A
=25°C
(d)
Linear derating factor
P
D
3
24
W
mW/°C
Operating and storage temperature range T
j
,T
stg
-55 to 150 °C
ABSOLUTE MAXIMUM RATINGS
