ZXTP2009ZTA

ZXTP2009Z
SEMICONDUCTORS
ISSUE 1 - JUNE 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
-50 -90 V I
C
=-100A
Collector-emitter breakdown voltage BV
CES
-50 -90 V I
C
=-100A
Collector-emitter breakdown voltage BV
CEO
-40 -58 V I
C
=-10mA*
Emitter-base breakdown voltage BV
EBO
-7.5 -8.3 V I
E
=-100A
Collector cut-off current I
CBO
1 -20 nA V
CB
=-40V
Collector cut-off current I
CES
1 -20 nA V
CB
=-32V
Emitter cut-off current I
EBO
1 -20 nA V
EB
=-6V
Collector-emitter saturation voltage V
CE(SAT)
-15
-44
-50
-120
-70
-125
-130
-162
-30
-60
-70
-165
-80
-175
-175
-185
mV
mV
mV
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-2A, I
B
=-40mA*
I
C
=-3.5A, I
B
=-175mA*
I
C
=-5.5A, I
B
=-550mA*
Base-emitter saturation voltage V
BE(SAT)
-820
-1000
-900
-1075
mV
mV
I
C
=-2A, I
B
=-40mA*
I
C
=-5.5A, I
B
=-550mA*
Base-emitter turn-on voltage V
BE(ON)
-778
-869
-850
-950
mV
mV
I
C
=-2A, V
CE
=-2V*
I
C
=-5.5A, V
CE
=-2V*
Static forward current transfer ratio H
FE
200
200
170
110
390
350
290
175
550
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-5.5A, V
CE
=-2V*
Transition frequency f
T
152 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output capacitance C
OBO
53 pF V
CB
=-10V, f=1MHz*
Switching times t
d
t
r
t
s
t
r
18
17
325
60
ns I
C
=-1A, V
CC
=-10V,
I
B1
=I
B2
=-100mA
Switching times t
d
t
r
t
s
t
r
55
107
264
103
ns I
C
=-2A, V
CC
=-30V,
I
B1
=I
B2
=-20mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
ZXTP2009Z
SEMICONDUCTORS
ISSUE 1 - JUNE 2005
5
TYPICAL CHARACTERISTICS
ZXTP2009Z
SEMICONDUCTORS
6
ISSUE 1 - JUNE 2005
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproduced
for any purpose or form part ofany order or contract or be regarded asa representation relating to the products or servicesconcerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PAD LAYOUT DETAILS
DIM
Millimeters Inches
DIM
Millimeters Inches
Min Max Min Max Min Max Min Max
A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059
b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167
b1 - 0.53 - 0.021 E1 - 2.60 - 0.102
b2 1.50 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118
c 0.28 0.44 0.011 0.017 H 2.60 2.85 0.102 0.112
D 4.40 4.60 0.173 0.181 - ----
PACKAGE DIMENSIONS

ZXTP2009ZTA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 40V PNP Low Sat
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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