DTA114TXV3T1G

Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 0
1 Publication Order Number:
DTA114EXV3T1/D
DTA114EXV3T1 Series
Preferred Devices
Digital Transistors (BRT)
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SC−89 package which is designed for low power surface mount
applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
Lead−Free Plating (Pure Sn)
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
Preferred devices are recommended choices for future use
and best overall value.
PNP SILICON
DIGITAL
TRANSISTORS
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
http://onsemi.com
SC−89
CASE 463C
STYLE 1
3
2
1
xx = Specific Device Code
(See Marking Table on page 2)
D = Date Code
MARKING DIAGRAM
xx D
1
3
2
DTA114EXV3T1 Series
http://onsemi.com
2
DEVICE MARKING AND RESISTOR VALUES
Device Marking R1 (K) R2 (K) Shipping
DTA114EXV3T1
DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
6A
6B
6C
6D
6E
6F
6P
6T
6R
10
22
47
10
10
4.7
47
47
4.7
10
22
47
47
22
10
3000/Tape & Reel
For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure,
BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1) @ T
A
= 25°C
Derate above 25°C
P
D
200
1.6
mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 1) R
θ
JA
600 °C/W
Total Device Dissipation,
FR−4 Board (Note 2) @ T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 2) R
θ
JA
400 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
DTA114EXV3T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V
CB
= 50 V, I
E
= 0) I
CBO
100 nAdc
Collector−Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0) I
CEO
500 nAdc
Emitter−Base Cutoff Current DTA114EXV3T1
(V
EB
= 6.0 V, I
C
= 0) DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
I
EBO
0.5
0.2
0.1
0.2
0.9
1.9
0.13
0.2
1.0
mAdc
Collector−Base Breakdown Voltage (I
C
= 10 µA, I
E
= 0) V
(BR)CBO
50 Vdc
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain DTA114EXV3T1
(V
CE
= 10 V, I
C
= 5.0 mA) DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
h
FE
35
60
80
80
160
160
80
160
20
60
100
140
140
250
250
140
250
35
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5.0 mA) DTA123EXV3T1
(I
C
= 10 mA, I
B
= 1.0 mA) DTA114TXV3T1/ DTA143TXV3T1/
DTA143ZXV3T1/DTA124XXV3T1/DTA143EXV3T1
V
CE(sat)
0.25 Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k) DTA114EXV3T1
DTA124EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k) DTA144EXV3T1
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k) DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
V
OL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k) DTA114TXV3T1
DTA143TXV3T1
V
OH
4.9 Vdc
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

DTA114TXV3T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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