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DTA114TXV3T1G

P1-P3P4-P6P7-P9P10-P10
DTA114EXV3T1 Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (continued) (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Input Resistor DTA114EXV3T1
DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
R1 7.0
15.4
32.9
7.0
7.0
3.3
32.9
32.9
3.3
10
22
47
10
10
4.7
47
47
4.7
13
28.6
61.1
13
13
6.1
61.1
61.1
6.1
kΩ
Resistor Ratio DTA114EXV3T1/DTA124EXV3T1/
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1/DTA143TXV3T1/
DTA144TXV3T1
DTA144WXV3T1
DTA143XXV3T1
R
1
/R
2
0.8
0.17
−
1.7
0.38
1.0
0.21
−
2.1
0.47
1.2
0.25
−
2.6
0.56
Figure 1. Derating Curve
250
200
150
100
50
0
−50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (°C)
P
D
, POWER DISSIPATION (MILLIWATTS)
R
θ
JA
= 600°C/W
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
Figure 2. Normalized Thermal Response
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
DTA114EXV3T1 Series
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EXV3T1
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 3. V
CE(sat)
versus I
C
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (VOLTS)
T
A
=−25°C
25°C
1 2 3 4 5
6 7 8 9 10
Figure 4. DC Current Gain
Figure 5. Output Capacitance Figure 6. Output Current versus Input Voltage
Figure 7. Input Voltage versus Output Current
0.01
20
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
0 40
50
1000
1 10 100
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
−25°C
100
10
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
T
A
=−25°C
25°C
75°C
75°C
I
C
/I
B
= 10
50
010203040
4
3
1
2
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
0
T
A
=−25°C
25°C
75°C
25°C
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
DTA114EXV3T1 Series
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS − DTA124EXV3T1
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 8. V
CE(sat)
versus I
C
Figure 9. DC Current Gain
1000
10
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
Figure 10. Output Capacitance
I
C
, COLLECTOR CURRENT (mA)
0 10 20 30
V
O
= 0.2 V
T
A
=−25°C
75°C
100
10
1
0.1
40 50
Figure 11. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001
0 1 2 3 4
V
in
, INPUT VOLTAGE (VOLTS)
5 6 7 8 9 10
Figure 12. Input Voltage versus Output Current
0.01
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
10
40
I
C
, COLLECTOR CURRENT (mA)
0 20 50
75°C
25°C
T
A
=−25°C
50
010203040
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
25°C
I
C
/I
B
= 10
25°C
−25°C
V
CE
= 10 V
T
A
=75°C
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
75°C
25°C
T
A
=−25°C
V
O
= 5 V
P1-P3P4-P6P7-P9P10-P10

DTA114TXV3T1G

Mfr. #:
Buy DTA114TXV3T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Lifecycle:
New from this manufacturer.
Delivery:
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