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NTTS2P03R2G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 2
1 Publication Order Number:
NTTS2P03R2/D
NTTS2P03R2
Power MOSFET
−2.48 Amps, −30 Volts
P−Channel Enhancement Mode
Single Micro8t Package
Features
• Ultra Low R
DS(on)
• Higher Efficiency Extending Battery Life
• Miniature Micro8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Micro8 Mounting Information Provided
• Pb−Free Package is Available
Applications
• Power Management in Portable and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
−30 V
Gate−to−Source Voltage − Continuous V
GS
"20 V
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
R
q
JA
P
D
I
D
I
D
160
0.78
−2.48
−1.98
°C/W
W
A
A
Thermal Resistance,
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
R
q
JA
P
D
I
D
I
D
70
1.78
−3.75
−3.0
°C/W
W
A
A
Thermal Resistance,
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Pulsed Drain Current (Note 5)
R
q
JA
P
D
I
D
I
D
I
DM
210
0.60
−2.10
−1.67
−17
°C/W
W
A
A
A
Thermal Resistance ,
Junction−to−Ambient (Note 4)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Pulsed Drain Current (Note 5)
R
q
JA
P
D
I
D
I
D
I
DM
100
1.25
−3.02
−2.42
−24
°C/W
W
A
A
A
Operating and Storage
Temperature Range
T
J
, T
stg
−55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10 PCB, Time ≤ 10 Seconds.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),
Time ≤ 10 Seconds.
3. Minimum FR−4 or G−10 PCB, Steady State.
4. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),
Steady State.
5. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
Drain
(Top View)
8
Source
7
6
5
1
2
3
4
Device Package Shipping
†
ORDERING INFORMATION
NTTS2P03R2 Micro8 4000/Tape & Reel
Micro8
CASE 846A
STYLE 1
Single P−Channel
D
S
G
Source
Source
Gate
Drain
Drain
Drain
MARKING DIAGRAM
& PIN ASSIGNMENT
1
8
−2.48 AMPERES
−30 VOLTS
85 mW @ V
GS
= −10 V
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
WW
AEG
G
NTTS2P03R2G Micro8
(Pb−Free)
4000/Tape & Reel
WW = Work Week
AE = Device Code
G = Pb−Free Package
(Note: Microdot may be in either location
)
NTTS2P03R2
http://onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted) (continued)
Rating Symbol Value Unit
Single Pulse Drain−to−Source Avalanche Energy − Starting T
J
= 25°C
(V
DD
= −30 Vdc, V
GS
= −10 Vdc, Peak I
L
= −3.0 Apk, L = 65 mH, R
G
= 25 W)
E
AS
292.5 mJ
Maximum Lead Temperature for Soldering Purposes for 10 seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted) (Note 6)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (V
GS
= 0 Vdc, I
D
= −250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
−30
−
−
−30
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= −30 Vdc, T
J
= 25°C)
(V
GS
= 0 Vdc, V
DS
= −30 Vdc, T
J
= 125°C)
I
DSS
−
−
−
−
−1.0
−25
mAdc
Gate−Body Leakage Current (V
GS
= −20 Vdc, V
DS
= 0 Vdc) I
GSS
− − −100 nAdc
Gate−Body Leakage Current (V
GS
= +20 Vdc, V
DS
= 0 Vdc) I
GSS
− − 100 nAdc
ON CHARACTERISTICS
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= −250 mAdc)
Temperature Coefficient (Negative)
V
GS(th)
−1.0
−
−1.7
3.6
−3.0
−
Vdc
Static Drain−to−Source On−State Resistance
(V
GS
= −10 Vdc, I
D
= −2.48 Adc)
(V
GS
= −4.5 Vdc, I
D
= −1.24 Adc)
R
DS(on)
−
−
0.063
0.100
0.085
0.135
W
Forward Transconductance (V
DS
= −15 Vdc, I
D
= −1.24 Adc) g
FS
− 3.1 − Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= −24 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 500 − pF
Output Capacitance
C
oss
− 160 −
Reverse Transfer Capacitance
C
rss
− 65 −
SWITCHING CHARACTERISTICS (Notes 7 & 8)
Turn−On Delay Time
(V
DD
= −24 Vdc, I
D
= −2.48 Adc,
V
GS
= −10 Vdc, R
G
= 6.0 W)
t
d(on)
− 10 −
ns
Rise Time t
r
− 20 −
Turn−Off Delay Time t
d(off)
− 40 −
Fall Time t
f
− 35 −
Turn−On Delay Time
(V
DD
= −24 Vdc, I
D
= −1.24 Adc,
V
GS
= −4.5 Vdc, R
G
= 6.0 W)
t
d(on)
− 16 −
ns
Rise Time t
r
− 40 −
Turn−Off Delay Time t
d(off)
− 30 −
Fall Time t
f
− 30 −
Total Gate Charge
(V
DS
= −24 Vdc,
V
GS
= −4.5 Vdc,
I
D
= −2.48 Adc)
Q
tot
− 15 22
nC
Gate−Source Charge Q
gs
− 3.2 −
Gate−Drain Charge Q
gd
− 4.0 −
BODY−DRAIN DIODE RATINGS (Note 7)
Diode Forward On−Voltage (I
S
= −2.48 Adc, V
GS
= 0 Vdc)
(I
S
= −2.48 Adc, V
GS
= 0 Vdc,
T
J
= 125°C)
V
SD
−
−
−0.92
−0.72
−1.3
−
Vdc
Reverse Recovery Time
(I
S
= −1.45 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
t
rr
− 38 −
ns
t
a
− 20 −
t
b
− 18 −
Reverse Recovery Stored Charge Q
RR
− 0.04 −
mC
6. Handling precautions to protect against electrostatic discharge is mandatory.
7. Indicates Pulse Test: Pulse Width = 300 msec max, Duty Cycle = 2%.
8. Switching characteristics are independent of operating junction temperature.
NTTS2P03R2
http://onsemi.com
3
T
J
= −55°C
T
J
= 25°C
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
T
J
= 100°C
T
J
= 25°C
V
GS
= −10 V
V
GS
= −4.5 V
I
D
= −2.48 A
V
GS
= −10 V
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
V
DS
≥ −10 V
150−50
1.6
1.4
−25 0 25 75
1.2
1
0.8
0.6
3
0
5
10,000
100
10 15 20 25
10
1
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
12510050
T
J,
JUNCTION TEMPERATURE (°C)
0.5
0.15
0.1
1.5 2.5 3.5
0.05
0
5.
5
0
0.3
0.15
46
0.1
0.05
0
10
1
5
4
23
3
2
0
5
1
4
−I
D,
DRAIN CURRENT (AMPS)
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
−I
DSS,
LEAKAGE (nA)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
V
GS
= −2.3 V
−2.5 V
T
J
= 25°C
0
3
2
1
0
0.25
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
0.5 0.75 1 1.25 1.5 1.75
−2.9 V
−3.1 V
−10 V
−2.7 V
−3.3 V
−3.5 V
−3.7 V
−3.9 V
−4.1 V
−4.5 V
−4.9 V
−6 V
82
0.2
0.25
I
D
= −2.48 A
T
J
= 25°C
4.5
1000
P1-P3P4-P6

NTTS2P03R2G

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
MOSFET -30V -2.48A P-Channel
Lifecycle:
New from this manufacturer.
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