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MCP1650S-E/MS

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30
MCP1650/51/52/53
DS21876B-page 4 2004-2013 Microchip Technology Inc.
Timing Diagram
Typical Application Circuits
Latch Truth Table
SRQ
00Qn
011
100
111
Osc
S
R
Q
DR
EXT
MCP1650/1/2/3 Timing Diagram
R
S
Q
Q
FB
CS
SHDN
V
IN
8
2
5
6
4
7
MCP1650
GND
Input
Voltage
3.3V ±10%
C
IN
10 µF
off
on
EXT
Boost
Inductor
3.3 µH
10 µF
Ceramic
90.9 k
V
OUT
= 12V
I
OUT
= 0 to 100 mA
10 k
MOSFET/Schottky
Combination Device
R
SENSE
0.05
3.3V to 12V 100 mA Boost Converter
1
3
NC
NC
C
OUT
2004-2013 Microchip Technology Inc. DS21876B-page 5
MCP1650/51/52/53
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
IN
TO GND...........................................................6.0V
CS,FB,LBI,LBO
,SHDN,PG,EXT............GND – 0.3V to
V
IN
+ 0.3V
Current at EXT pin ................................................±1A
Storage temperature ..........................-65°C to +150°C
Operating Junction Temperature........-40°C to +125°C
ESD protection on all pins  4kV HBM
† Notice: Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply at V
IN
= +2.7V to +5.5V, SHDN =High,
T
J
= -40°C to +125°C. Typical values apply for V
IN
= 3.3V, T
A
+25°C.
Parameters Sym Min Typ Max Units Conditions
Input Characteristics
Supply Voltage V
IN
2.7 — 5.5 V
Undervoltage Lockout
(S Option)
UVLO 2.4 2.55 2.7 V V
IN
rising edge
Under Voltage Lockout
(R Option)
UVLO 1.85 2.0 2.15 V V
IN
rising edge
Undervoltage Hysteresis UVLO
HYST
—117— mV
Shutdown Supply Current I
SHD
— 0.001 1 µA SHDN = GND
Quiescent Supply Current I
Q
— 120 220 µA EXT = Open
Soft Start Time T
SS
—500— µs
Feedback Characteristics
Feedback Voltage V
FB
1.18 1.22 1.26 V All conditions
Feedback Comparator
Hysteresis
V
HYS
—1223mV
Feedback Input Bias Current I
FBlk
-50 — 50 nA V
FB
< 1.3V
Current Sense Input
Current Sense Threshold I
SNS-TH
75 114 155 mV
Delay from Current Sense to
Output
T
dly_ISNS
—80— ns
Ext Drive
EXT Driver ON Resistance
(High Side)
R
HIGH
—818
EXT Driver ON Resistance
(Low Side)
R
LOW
—412
Oscillator Characteristics
Switching Frequency F
OSC
650 750 850 kHz
Low Duty Cycle Switch-Over
Voltage
V
LowDuty
—3.8— VV
IN
rising edge
Duty Cycle Switch Voltage
Hysteresis
DC
Hyst
—92—mV
Low Duty Cycle DC
LOW
50 56 62 %
High Duty Cycle DC
HIGH
72 80 88 %
MCP1650/51/52/53
DS21876B-page 6 2004-2013 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS
Shutdown Input
Logic High Input V
IN-HIGH
50 — — % of V
IN
Logic Low Input V
IN-Low
——15% of V
IN
Input Leakage Current I
SHDN
— 5 100 nA SHDN=V
IN
Low Battery Detect (MCP1651/MCP1653 Only)
Low Battery Threshold LBI
TH
1.18 1.22 1.26 V LBI Input falling (All Conditions)
Low Battery Threshold
Hysteresis
LBI
THHYS
95 123 145 mV
Low Battery Input Leakage
Current
I
LBI
—10— nAV
LBI
= 2.5V
Low Battery Output Voltage V
LBO
—53200mVI
LB
SINK = 3.2 mA, V
LBI
= 0V
Low Battery Output Leakage
Current
I
LBO
—0.01 1 µAV
LBI
= 5.5V, V
LBO
= 5.5V
Time Delay from LBI to LBO T
D_LBO
—70— µsL
BI
Transitions from
L
BITH
+0.1VtoL
BITH
-0.1V
Power Good Output (MCP1652/MCP1653 Only)
Power Good Threshold Low V
PGTH-L
-20 -15 -10 % Referenced to Feedback Voltage
Power Good Threshold High V
PGTH-H
+10 +15 +20 % Referenced to Feedback Voltage
Power Good Threshold
Hysteresis
V
PGTH-HYS
— 5 — % Referenced to Feedback Voltage
(Both Low and High Thresholds)
Power Good Output Voltage V
PGOUT
—53200mVI
PG
SINK = 3.2 mA, V
FB
= 0V
Time Delay from V
FB
out of
regulation to Power Good
Output transition
T
D_PG
—85— µsV
FB
Transitions from
V
FBTH
+0.1VtoV
FBTH
-0.1V
Electrical Specifications: Unless otherwise noted, all parameters apply at V
IN
= +2.7V to +5.5V, SHDN = High,
T
A
= -40°C to +125°C. Typical values apply for V
IN
= 3.3V, T
A
= +25°C.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Storage Temperature Range T
A
-40 — +125 °C
Operating Junction Temperature
Range
T
J
-40 — +125 °C Continuous
Thermal Package Resistances
Thermal Resistance, MSOP-8
JA
— 208 — °C/W Single-Layer SEMI G42-88
Board, Natural Convection
Thermal Resistance, MSOP-10
JA
— 113 — °C/W 4-Layer JC51-7 Standard Board,
Natural Convection
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, all parameters apply at V
IN
= +2.7V to +5.5V, SHDN =High,
T
J
= -40°C to +125°C. Typical values apply for V
IN
= 3.3V, T
A
+25°C.
Parameters Sym Min Typ Max Units Conditions
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30

MCP1650S-E/MS

Mfr. #:
Buy MCP1650S-E/MS
Manufacturer:
Microchip Technology
Description:
Switching Controllers UVLO 2.55V
Lifecycle:
New from this manufacturer.
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