TIP33A-S Datasheet TIP33C-S, TIP33B-S, TIP33A-S | P1-P3

TIP33, TIP33A, TIP33B, TIP33C

NPN SILICON POWER TRANSISTORS

1

JULY 1968 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

●

Designed for Complementary Use with the

TIP34 Series

●

80 W at 25°C Case Temperature

●

10 A Continuous Collector Current

●

15 A Peak Collector Current

●

Customer-Specified Selections Available

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. This value applies for t

p

≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I

B(on)

= 0.4 A, R

BE

= 100 Ω,

V

BE(off)

= 0, R

S

= 0.1 Ω, V

CC

= 20 V.

RATING SYMBOL VALUE UNIT

Collector-base voltage (I

E

= 0)

TIP33

TIP33A

TIP33B

TIP33C

V

CBO

80

100

120

140

V

Collector-emitter voltage (I

B

= 0)

TIP33

TIP33A

TIP33B

TIP33C

V

CEO

40

60

80

100

V

Emitter-base voltage V

EBO

5V

Continuous collector current I

C

10 A

Peak collector current (see Note 1) I

CM

15 A

Continuous base current I

B

3A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P

tot

80 W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P

tot

3.5 W

Unclamped inductive load energy (see Note 4) ½LI

C

2

62.5 mJ

Operating junction temperature range T

j

-65 to +150 °C

Storage temperature range T

stg

-65 to +150 °C

Lead temperature 3.2 mm from case for 10 seconds T

L

250 °C

SOT-93 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

B

C

E

1

2

3

OBSOLETE

TIP33, TIP33A, TIP33B, TIP33C

NPN SILICON POWER TRANSISTORS

2

JULY 1968 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOTES: 5. These parameters must be measured using pulse techniques, t

p

= 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

(BR)CEO

Collector-emitter

breakdown voltage

I

C

= 30 mA

(see Note 5)

I

B

= 0

TIP33

TIP33A

TIP33B

TIP33C

40

60

80

100

V

I

CES

Collector-emitter

cut-off current

V

CE

= 80 V

V

CE

=100 V

V

CE

=120 V

V

CE

=140 V

V

BE

=0

V

BE

=0

V

BE

=0

V

BE

=0

TIP33

TIP33A

TIP33B

TIP33C

0.4

mA

I

CEO

Collector cut-off

current

V

CE

= 30 V

V

CE

= 60 V

I

B

=0

I

B

=0

TIP33/33A

TIP33B/33C

0.7

mA

I

EBO

Emitter cut-off

current

V

EB

= 5 V I

C

=0 1 mA

h

FE

Forward current

transfer ratio

V

CE

= 4 V

V

CE

= 4 V

I

C

= 1A

I

C

= 3A

(see Notes 5 and 6)

40

20 100

V

CE(sat)

Collector-emitter

saturation voltage

I

B

= 0.3 A

I

B

= 2.5 A

I

C

= 3A

I

C

= 10A

(see Notes 5 and 6)

1

4

V

BE

Base-emitter

voltage

V

CE

= 4 V

V

CE

= 4 V

I

C

= 3 A

I

C

= 10 A

(see Notes 5 and 6)

1.6

3

V

h

fe

Small signal forward

current transfer ratio

V

CE

= 10 V I

C

= 0.5 A f = 1 kHz 20

|

h

fe

|

Small signal forward

current transfer ratio

V

CE

= 10 V I

C

= 0.5 A f = 1 MHz 3

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

θJC

Junction to case thermal resistance 1.56 °C/W

R

θJA

Junction to free air thermal resistance 35.7 °C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

†

MIN TYP MAX UNIT

t

on

Tu r n -o n ti m e I

C

= 6 A

V

BE(off)

= -4 V

I

B(on)

= 0.6 A

R

L

= 5 Ω

I

B(off)

= -0.6 A

t

p

= 20 µs, dc ≤ 2%

0.6 µs

t

off

Turn-off time 1µs

OBSOLETE

TIP33, TIP33A, TIP33B, TIP33C

NPN SILICON POWER TRANSISTORS

3

JULY 1968 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TYPICAL CHARACTERISTICS

Figure 1. Figure 2.

Figure 3.

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

0·01 0·1 1·0 10

h

FE

- DC Current Gain

1·0

10

100

1000

TCS633AA

V

CE

= 4 V

T

C

= 25°C

t

p

= 300 µs, duty cycle < 2%

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

I

B

- Base Current - A

0·01 0·1 1·0 10

V

CE(sat)

- Collector-Emitter Saturation Voltage - V

0·01

0·1

1·0

10

TCS633AB

I

C

= 1 A

I

C

= 3 A

I

C

= 6 A

I

C

= 10 A

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

0·1 1 10

V

BE

- Base-Emitter Voltage - V

0·6

0·8

1·0

1·2

1·4

1·6

1·8

TCS633AC

V

CE

= 4 V

T

C

= 25°C

OBSOLETE

TIP33A-S

TIP33A-S

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