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TIP33A-S

P1-P3P4-P4
TIP33, TIP33A, TIP33B, TIP33C
NPN SILICON POWER TRANSISTORS
4
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
1·0 10 100 1000
I
C
- Collector Current - A
0·01
0·1
1·0
10
100
SAS633AA
TIP33
TIP33A
TIP33B
TIP33C
t
p
= 300 µs, d = 0.1 = 10%
t
p
= 1 ms, d = 0.1 = 10%
t
p
= 10 ms, d = 0.1 = 10%
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - °C
0 255075100125150
P
tot
- Maximum Power Dissipation - W
0
20
40
60
80
100
TIS633AA
OBSOLETE
P1-P3P4-P4

TIP33A-S

Mfr. #:
Buy TIP33A-S
Manufacturer:
Bourns
Description:
Bipolar Transistors - BJT 60V 10A NPN
Lifecycle:
New from this manufacturer.
Delivery:
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