PMDT290UNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 September 2011 3 of 16
NXP Semiconductors
PMDT290UNE
20 V, 800 mA dual N-channel Trench MOSFET
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
= 25 °C - 370 mA
ESD maximum rating
V
ESD
electrostatic discharge voltage HBM
[3]
- 2000 V
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
T
j
(°C)
−75 17512525 75−25
017aaa123
40
80
120
P
der
(%)
0
T
j
(°C)
−75 17512525 75−25
017aaa124
40
80
120
I
der
(%)
0