PMDT290UNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 September 2011 7 of 16
NXP Semiconductors
PMDT290UNE
20 V, 800 mA dual N-channel Trench MOSFET
T
j
= 25 °C T
j
= 25 °C; V
DS
= 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
T
j
= 25 °C
(1) V
GS
= 1.3 V
(2) V
GS
= 1.4 V
(3) V
GS
= 1.6 V
(4) V
GS
= 1.8 V
(5) V
GS
= 2.5 V
(6) V
GS
= 4.5 V
I
D
= 400 mA
(1) T
j
= 150 °C
(2) T
j
= 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
V
DS
(V)
04312
017aaa351
0.4
0.5
0.3
0.2
0.1
0.6
0.7
I
D
(A)
0.0
4.5 V
2.5 V
1.8 V
V
GS
= 1.6 V
1.4 V
1.2 V
1.0 V
017aaa352
10
–4
10
–5
10
–3
I
D
(A)
10
–6
V
GS
(V)
0.00 1.251.000.50 0.750.25
(1)
(2) (3)
I
D
(A)
0.70.50.1 0.60.40.20.0 0.3
017aaa353
1.0
0.5
1.5
2.0
R
DSon
(Ω)
0.0
(1)
(2) (3)
(4)
(5)
(6)
V
GS
(V)
054231
017aaa354
1.0
0.5
1.5
2.0
R
DSon
(Ω)
0.0
(1)
(2)
