BH18RB1WGUT-E2

BH□□RB1WGUT series
Technical Note
4/8
www.rohm.com
2011.01 - Rev.C
© 2011 ROHM Co., Ltd. All rights reserved.
Fig. 12 Output Voltage vs Temperature
(BH15RB1WGUT)
Fig. 13 Output Voltage vs Temperature
(BH28RB1WGUT)
Fig. 14 Output Voltage vs Temperature
(BH33RB1WGUT)
Fig. 15 Ripple Rejection
(BH15RB1WGUT)
Fig. 16 Ripple Rejection
(BH28RB1WGUT)
Fig. 17 Ripple Rejection
(BH33RB1WGUT)
10
20
30
40
50
60
70
80
Frequency f[Hz]
Ripple Rejection R.R.[dB]
100
1 k 10 k 100 k 1M
10
20
30
40
50
60
70
80
Frequency f[Hz]
Ripple Rejection R.R.[dB]
100 1 k 10 k 100 k 1M
10
20
30
40
50
60
70
80
Frequency f[Hz]
Ripple Rejection R.R.[dB]
100 1 k 10 k 100 k 1M
Fig. 18 Load Response (Co = 1.0 μF)
(BH15RB1WGUT)
IOUT = 1 mA 30 mA
Fig. 19 Load Response (Co = 1.0 μF)
(BH28RB1WGUT)
IOUT = 1 mA 30 mA
Fig, 20 Load Response (Co = 1.0 μF)
(BH33RB1WGUT)
Fig. 23 Output Voltage Rise Time
(BH33RB1WGUT)
Co=1.0μF
Io=10mA
Co=1.0μF
Io=10mA
Co=1.0μF
Io=10mA
VOUT 50 mV/div
50 μs/div
VOUT 50 mV/div
50 μs/div
IOUT = 1 mA 30 mA
VOUT 50 mV/div
50 μs/div
STBY
VOUT
1 V/div
100 μs/div
1 V/div
Co = 1 μF
Co = 2.2 μF
RL = 3.3 k
STBY
VOUT
1 V/div
100 μs/div
1 V/div
Co = 1 μF
Co = 2.2 μF
Fig. 22 Output Voltage Rise
Time
(BH28RB1WGUT)
RL = 2.8 k
Fig. 21 Output Voltage Rise Time
(BH15RB1WGUT)
STBY
VOUT
1 V/div
100 μs/div
1 V/div
Co = 1 μF
Co = 2.2 μF
RL = 1.5 k
1.40
1.45
1.50
1.55
1.60
-50 -25 0 25 50 75 100
Temp[
]
Output Voltage VOUT[V]
IOUT=1mA
2.70
2.75
2.80
2.85
2.90
-50 -25 0 25 50 75 100
Temp[
]
Output Voltage VOUT[V]
IOUT=1mA
3.20
3.25
3.30
3.35
3.40
-50 -25 0 25 50 75 100
Temp[
]
Output Voltage VOUT[V]
IOUT=1mA
BH□□RB1WGUT series
Technical Note
5/8
www.rohm.com
2011.01 - Rev.C
© 2011 ROHM Co., Ltd. All rights reserved.
Block Diagram, Recommended Circuit Diagram, and Pin Assignment Diagram
Power Dissipation (Pd)
1. Power dissipation (Pd)
Power dissipation calculations include output power dissipation characteristics and internal IC power consumption. In
the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the
junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the
IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation.
Calculating the maximum internal IC power consumption (P
MAX)
P
MAX = (VIN - VOUT) IOUT (MAX.) VIN: Input voltage
VOUT: Output voltage
IOUT (MAX): Output current
2. Power dissipation/power dissipation reduction (Pd)
VCSP60N1
*Circuit design should allow a sufficient margin for the temperature range for PMAX < Pd.
Fig. 25 VCSP60N1 Power Dissipation/Power Dissipation Reduction (Example)
Input Output Capacitors
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors are used when the power supply impedance increases or when long wiring paths are used, so
they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias
characteristics. Use X5R or X7R ceramic capacitors, which offer good temperature and DC bias characteristics as well as
stable high voltages.
Typical ceramic capacitor characteristics
Pin No. Symbol Function
B2 VIN Power supply input
B1 VOUT Voltage output
A1 GND Ground
A2 STBY
Output voltage on/off control
(High: ON, Low: OFF)
0
20
40
60
80
100
120
01234
DC bias Vdc (V)
Capacitance rate of change (%)]
70
75
80
85
90
95
100
01234
DC bias Vdc (V)
Capacitance rate of change (%)
50 V
torelance
16 V torelance
10 V torelance
50 V torelance
16 V torelance
10 V torelance
Fig. 26 Capacitance vs Bias (Y5V)
Fig.27 Capacitance vs Bias
(X5R, X7R)
Fig. 28 Capacitance vs Temperature
(X5R, X7R, Y5V)
Fig. 24
Board: 7 mm
7 mm 0.8 mm
Material: Glass epoxy PCB
0
0.2
0.4
0.6
0 25 50 75 100 125
Ta[
]
Pd[W]
530 mW
Cin: 1.0 µF
Co: 1.0 µF
THERMAL
PROTECTION
OVER CURRENT
PROTECTION
VOLTAGE
REFERENCE
CONTROL
BLOCK
B1
A1
B2
A2
Cin
VOUT
Co
VIN
VIN
GND
VSTBY
VOUT
STBY
A
B
2
1
TOP VIEW (Mark side)
1PIN MARK
BH□□RB1WGUT
0
20
40
60
80
100
120
-25 0 25 50 75
Temp[
]
静電容量変化率
[%]
Y5V
X7R
X5R
Capacitance rate of change (%)
Capacitance rate of change (%)
Ca
p
acitance rate of chan
g
e
(
%
)
BH□□RB1WGUT series
Technical Note
6/8
www.rohm.com
2011.01 - Rev.C
© 2011 ROHM Co., Ltd. All rights reserved.
Output capacitors
Mounting input capacitor between input pin and GND (as close to pin as possible), and also output capacitor between output
pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage
supply source connected to the VCC. The higher value the output capacitor goes the more stable the whole operation
becomes. This leads to high load transient response. Please confirm the whole operation on actual application board.
Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its value
goes lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking capacitor makers.
BH□□RB1WGUT
Operation Notes
1. Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can
break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any
over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as
fuses.
2. Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
3. Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
4. Thermal shutdown circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to shut
the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not
continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is
assumed.
5. Overcurrent protection circuit
The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This
circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current
flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other
component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.
However, the IC should not be used in applications characterized by the continuous operation or transitioning of the
protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to
temperatures.
6. Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction.
7. Ground wiring patterns
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the
GND wiring pattern of any external components, either.
8. Influence of strong light
Exposure of the IC to strong light sources such as infrared light from a halogen lamp may cause the IC to malfunction.
When it is necessary to use the IC in such environments, implement measures to block exposure to light from the light
source. During testing, exposure to neither fluorescent lighting nor white LEDs had a significant effect on the IC.
Fig. 29 Stable Operating Region Characteristics (Example)
0.01
0.1
1
10
100
0 50 100 150
出力電流
I
OUT
[mA]
ESR[
Ω
]
Stable region
C
OUT = 1.0 µF
Ta = +25°C
Output Current Iout [mA]

BH18RB1WGUT-E2

Mfr. #:
Manufacturer:
Description:
LDO Voltage Regulators 1.8V
Lifecycle:
New from this manufacturer.
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