ICS8305 Data Sheet LOW SKEW, 1-TO-4 MULTIPLEXED DIFFERENTIAL/LVCMOS-TO-LVCMOS/LVTTL FANOUT BUFFER
ICS8305AG REVISION C
MAY 30, 2014 4 ©2014 Integrated Device Technology, Inc.
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress
specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC
Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.
DC Electrical Characteristics
Table 4A. Power Supply DC Characteristics, V
DD
= 3.3V±5%, V
DDO
= 3.3V±5% or 2.5V±5% or 1.8V±0.5V or 1.5V±5%,
T
A
= 0°C to 70°C
Item Rating
Supply Voltage, V
DD
4.6V
Inputs, V
I
-0.5V to V
DD
+ 0.5V
Outputs, V
O
-0.5V to V
DDO
+ 0.5V
Package Thermal Impedance,
JA
89C/W (0 lfpm)
Storage Temperature, T
STG
-65C to 150C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
DD
Positive Supply Voltage 3.135 3.3 3.465 V
V
DDO
Output Supply Voltage
3.135 3.3 3.465 V
2.375 2.5 2.625 V
1.65 1.8 1.95 V
1.425 1.5 1.575 V
I
DD
Power Supply Current 21 mA
I
DDO
Output Supply Current 5mA
ICS8305 Data Sheet LOW SKEW, 1-TO-4 MULTIPLEXED DIFFERENTIAL/LVCMOS-TO-LVCMOS/LVTTL FANOUT BUFFER
ICS8305AG REVISION C
MAY 30, 2014 5 ©2014 Integrated Device Technology, Inc.
Table 4B. LVCMOS/LVTTL DC Characteristics, T
A
= 0°C to 70°C
NOTE 1: Outputs terminated with 50 to V
DDO
/2. See Parameter Measurement Information, Output Load Test Circuit diagrams.
Table 4C. Differential DC Characteristics, T
A
= -40°C to 85°C
NOTE 1: V
IL
should not be less than -0.3V.
NOTE 2: Common mode input voltage is defined as V
IH
.
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
IH
Input High
Voltage
CLK_EN,
CLK_SEL, OE
2V
DD
+ 0.3 V
LVCMOS_CLK 2 V
DD
+ 0.3 V
V
IL
Input Low
Voltage
CLK_EN,
CLK_SEL, OE
-0.3 0.8 V
LVCMOS_CLK -0.3 1.3 V
I
IH
Input
High Current
CLK_EN,
CLK_SEL, OE
V
DD
= V
IN
= 3.465V 5 µA
LVCMOS_CLK V
DD
= V
IN
= 3.465V 150 µA
I
IL
Input
Low Current
CLK_EN,
CLK_SEL, OE
V
DD
= 3.465V, V
IN
= 0V -150 µA
LVCMOS_CLK V
DD
= 3.465V, V
IN
= 0V -5 µA
V
OH
Output High Voltage; NOTE 1
V
DDO
= 3.3V ± 5% 2.6 V
V
DDO
= 2.5V ± 5% 1.8 V
V
DDO
= 1.8V ± 0.15V 1.5 V
V
DDO
= 1.5V ± 5% V
DDO
- 0.3 V
V
OL
Output Low Voltage; NOTE 1
V
DDO
= 3.3V ± 5% 0.5 V
V
DDO
= 2.5V ± 5% 0.5 V
V
DDO
= 1.8V ± 0.15V 0.4 V
V
DDO
= 1.5V ± 5% 0.35 V
I
OZL
Output Hi-Z Current Low -5 µA
I
OZH
Output Hi-Z Current High A
Symbol Parameter Test Conditions Minimum Typical Maximum Units
I
IH
Input High
Current
nCLK V
DD
= V
IN
= 3.465V 150 µA
CLK V
DD
= V
IN
= 3.465V 150 µA
I
IL
Input Low
Current
nCLK V
DD
= 3.465V, V
IN
= 0V -150 µA
CLK V
DD
= 3.465V, V
IN
= 0V -5 µA
V
PP
Peak-to-Peak Voltage;
NOTE 1
0.15 1.3 V
V
CMR
Common Mode Input Voltage;
NOTE 1, 2
GND + 0.5 V
DD
– 0.85 V
ICS8305 Data Sheet LOW SKEW, 1-TO-4 MULTIPLEXED DIFFERENTIAL/LVCMOS-TO-LVCMOS/LVTTL FANOUT BUFFER
ICS8305AG REVISION C
MAY 30, 2014 6 ©2014 Integrated Device Technology, Inc.
AC Electrical Characteristics
Table 5A. AC Characteristics, V
DD
= V
DDO
= 3.3V ± 5%, T
A
= 0°C to 70°C
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium
has been reached under these conditions.
All parameters measured at ƒ 350MHz unless noted otherwise.
NOTE 1A: Measured from the V
DD
/2 of the input to V
DDO
/2 of the output.
NOTE 1B: Measured from the differential input crossing point to V
DDO
/2 of the output.
NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at V
DDO
/2.
NOTE 3: Defined as skew between outputs on different devices operating a the same supply voltages and with equal load conditions. Using
the same type of input on each device, the output is measured at V
DDO
/2.
NOTE 4: These parameters are guaranteed by characterization. Not tested in production.
NOTE 5: Driving only one input clock.
NOTE 6: This parameter is defined in accordance with JEDEC Standard 65.
Table 5B. AC Characteristics, V
DD
= 3.3V ± 5%, V
DDO
= 2.5V ± 5%, T
A
= 0°C to 70°C
For NOTES, see Table 5A above.
Parameter Symbol Test Conditions Minimum Typical Maximum Units
f
MAX
Output Frequency 350 MHz
tp
LH
Propagation
Delay,
Low to High
LVCMOS_CLK;
NOTE 1A
CLK/nCLK;
NOTE 1B
1.75 2.75 ns
tsk(o) Output Skew; NOTE 2, 6 Measured on the Rising Edge 35 ps
tsk(pp) Part-to-Part Skew; NOTE 3, 6 700 ps
tjit
Buffer Additive Phase Jitter, RMS;
refer to Additive Phase Jitter
Section, NOTE 5
0.04 ps
t
R
/ t
F
Output Rise/Fall Time;
NOTE 4
20% to 80% 100 700 ps
odc Output Duty Cycle
Ref = CLK/nCLK 45 55 %
Ref = LVCMOS_CLK, ƒ 300MHz 45 55 %
t
EN
Output Enable Time; NOTE 4 5ns
t
DIS
Output Disable Time; NOTE 4 5ns
Parameter Symbol Test Conditions Minimum Typical Maximum Units
f
MAX
Output Frequency 350 MHz
tp
LH
Propagation
Delay,
Low to High
LVCMOS_CLK;
NOTE 1A
CLK/nCLK;
NOTE 1B
1.8 2.9 ns
tsk(o) Output Skew; NOTE 2, 6 Measured on the Rising Edge 35 ps
tsk(pp) Part-to-Part Skew; NOTE 3, 6 800 ps
tjit
Buffer Additive Phase Jitter, RMS;
refer to Additive Phase Jitter
Section, NOTE 5
0.04 ps
t
R
/ t
F
Output Rise/Fall Time; NOTE 4 20% to 80% 100 700 ps
odc Output Duty Cycle
Ref = CLK/nCLK 44 56 %
Ref = LVCMOS_CLK, ƒ 300MHz 44 56 %
t
EN
Output Enable Time; NOTE 4 5ns
t
DIS
Output Disable Time; NOTE 4 5ns

8305AGLFT

Mfr. #:
Manufacturer:
IDT
Description:
Clock Drivers & Distribution 1:4 Multiplex Diff/L VCMOS to LVCMOS/LVTT
Lifecycle:
New from this manufacturer.
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