NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 8V
V
CEO
collector-emitter voltage open base − 5V
V
EBO
emitter-base voltage open collector − 2V
I
C
collector current (DC) − 6.5 mA
P
tot
total power dissipation T
s
≤ 165 °C; note 1 − 32 mW
T
stg
storage temperature −65 150 °C
T
j
junction temperature − 175 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point note 1 320 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector leakage current I
E
= 0; V
CB
=5V −−50 µA
h
FE
DC current gain I
C
= 0.5 mA; V
CE
=1V 5080200
C
re
feedback capacitance I
C
=i
c
= 0; V
CB
= 1 V; f = 1 MHz − 0.21 0.3 pF
f
T
transition frequency I
C
= 1 mA; V
CE
=1V;
T
amb
=25°C; f = 500 MHz
3.5 5 − GHz
G
UM
maximum unilateral power gain
(note 1)
I
C
= 0.5 mA; V
CE
=1V;
f = 1 GHz; T
amb
=25°C
− 18 − dB
F noise figure I
C
= 0.5 mA; V
CE
= 1 V; f = 1 GHz;
Γ = Γ
opt
; T
amb
=25°C
− 1.8 − dB
I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz;
Γ = Γ
opt
; T
amb
=25°C
− 2 − dB
G
UM
10 log
S
21
2
1
S
11
2
–
1
S
22
2
–
--------------------------------------------------------------
dB=
Rev. 04 - 27 November 2007
