NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
Fig.6 Gain as a function of collector current;
typical values.
V
CE
= 1 V; f = 500 MHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
handbook, halfpage
30
20
10
0
MCD141
gain
(dB)
I (mA)
C
0 1.0 2.5
0.5 1.5 2.0
MSG
G
UM
Fig.7 Gain as a function of collector current;
typical values.
V
CE
= 1 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
handbook, halfpage
0 1.0 2.5
20
15
5
0
10
MCD142
0.5 1.5 2.0
gain
(dB)
I (mA)
C
MSG
G
UM
Fig.8 Gain as a function of frequency;
typical values.
I
C
= 0.5 mA; V
CE
=1V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
handbook, halfpage
50
MCD143
10 10
2
10
3
10
4
0
10
20
30
40
gain
(dB)
f (MHz)
G
UM
MSG
Fig.9 Gain as a function of frequency;
typical values.
I
C
= 1 mA; V
CE
=1V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
handbook, halfpage
50
MCD144
10 10
2
10
3
10
4
0
10
20
30
40
gain
(dB)
f (MHz)
G
UM
MSG
Rev. 04 - 27 November 2007
