APT11GF120KRG Datasheet APT11GF120KRG | P1-P3

052-6213 Rev C 1-2006

APT11GF120KR(G)

TYPICAL PERFORMANCE CURVES

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise speciﬁed.

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

GE

= 0V, I

C

= 400µA)

Gate Threshold Voltage (V

CE

= V

GE

, I

C

= 350µA, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 8A, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 8A, T

j

= 125°C)

Collector Cut-off Current (V

CE

= 1200V, V

GE

= 0V, T

j

= 25°C)

2

Collector Cut-off Current (V

CE

= 1200V, V

GE

= 0V, T

j

= 125°C)

2

Gate-Emitter Leakage Current (V

GE

= ±20V)

Symbol

V

(BR)CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

Units

Volts

µA

nA

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

SSOA

P

D

T

J

,T

STG

T

L

APT11GF120KR(G)

1200

±30

25

14

44

44A @ 1200V

156

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ T

C

= 25°C

Continuous Collector Current @ T

C

= 100°C

Pulsed Collector Current

1

Switching Safe Operating Area @ T

J

= 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

APT Website - http://www.advancedpower.com

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN TYP MAX

1200

4.5 5.5 6.5

2.5 3.0

3.1

400

2000

±100

The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through

technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi

-

taxial Diode (FRED) offers superior ruggedness and fast switching speed.

• Low Forward Voltage Drop • High Freq. Switching to 20KHz

• RBSOA and SCSOA Rated • Ultra Low Leakage Current

• Ultrafast Soft Recovery Anti-parallel Diode

FAST IGBT & FRED

®

1200V

APT11GF120KR

APT11GF120KRG*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

TO-220

G

C

E

052-6213 Rev C 1-2006

APT11GF120KR(G)

THERMAL AND MECHANICAL CHARACTERISTICS

UNIT

°C/W

gm

MIN TYP MAX

.80

N/A

5.9

Characteristic

Junction to Case (IGBT)

Junction to Case (DIODE)

Package Weight

Symbol

R

θ

JC

R

θ

JC

W

T

DYNAMIC CHARACTERISTICS

Symbol

C

ies

C

oes

C

res

V

GEP

Q

g

Q

ge

Q

gc

SSOA

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

Test Conditions

Capacitance

V

GE

= 0V, V

CE

= 25V

f = 1 MHz

Gate Charge

V

GE

= 15V

V

CE

= 600V

I

C

= 8A

T

J

= 150°C, R

G

= 10Ω, V

GE

=

15V, L = 100µH,V

CE

= 1200V

Inductive Switching (25°C)

V

CC

= 800V

V

GE

= 15V

I

C

= 8A

R

G

= 10Ω

T

J

= +25°C

Inductive Switching (125°C)

V

CC

= 800V

V

GE

= 15V

I

C

= 8A

R

G

= 10Ω

T

J

= +125°C

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Total Gate Charge

3

Gate-Emitter Charge

Gate-Collector ("Miller ") Charge

Switching Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy

4

Turn-on Switching Energy (Diode)

5

Turn-off Switching Energy

6

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy

4

Turn-on Switching Energy (Diode)

55

Turn-off Switching Energy

6

MIN TYP MAX

620

90

40

10.0

65

10

35

44

7

5

100

55

300

485

285

7

5

115

46

295

915

325

UNIT

pF

V

nC

A

ns

µJ

ns

µJ

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

For Combi devices, I

ces

includes both IGBT and FRED leakages

3

See MIL-STD-750 Method 3471.

4

E

on1

is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current

adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in ﬁgure 21, but with a Silicon Carbide diode.

5

E

on2

is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. (See Figures 21, 22.)

6

E

off

is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

APT Reserves the right to change, without notice, the speciﬁcations and information contained herein.

052-6213 Rev C 1-2006

APT11GF120KR(G)

TYPICAL PERFORMANCE CURVES

V

GS(TH)

, THRESHOLD VOLTAGE V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V) I

C

, COLLECTOR CURRENT (A) I

C

, COLLECTOR CURRENT (A)

(NORMALIZED)

I

C,

DC COLLECTOR CURRENT(A) V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V) V

GE

, GATE-TO-EMITTER VOLTAGE (V) I

C

, COLLECTOR CURRENT (A)

250µs PULSE

TEST<0.5 % DUTY

CYCLE

30

25

20

15

10

5

0

30

25

20

15

10

5

0

6

5

4

3

2

1

0

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0.75

0.70

0 1 2 3 4 5 6 7 0 5 10 15

0 2 4 6 8 10 12 14 0 10 20 30 40 50 60 70 80

8 10 12 14 16 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

40

35

30

25

20

15

10

5

0

16

14

12

10

8

6

4

2

0

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

35

30

25

20

15

10

5

0

V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V) V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(T

J

= 25°C) FIGURE 2, Output Characteristics (T

J

= 125°C)

V

GE

, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)

FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge

V

GE

, GATE-TO-EMITTER VOLTAGE (V) T

J

, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature

15V

13V

12V

9V

14V

8V

V

GE

= 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

GE

= 15V

V

CE

= 960V

V

CE

= 600V

V

CE

= 240V

I

C

= 8A

T

J

= 25°C

T

J

= 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

I

C

= 16A

I

C

= 8A

I

C

= 4A

11V

10V

I

C

= 16A

I

C

= 8A

I

C

= 4A

APT11GF120KRG

APT11GF120KRG

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