052-6213 Rev C 1-2006
APT11GF120KR(G)
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 800V
R
G
= 10Ω
L = 100µH
SWITCHING ENERGY LOSSES (µJ) E
ON2
, TURN ON ENERGY LOSS (µJ) t
r,
RISE TIME (ns) t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) E
OFF
, TURN OFF ENERGY LOSS (µJ) t
f,
FALL TIME (ns) t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS) T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G
= 10Ω, L = 100µH, V
CE
= 800V
V
CE
= 800V
T
J
= 25°C, or 125°C
R
G
= 10Ω
L = 100µH
V
GE
= 15V
T
J
= 25 or 125°C,V
GE
= 15V
0 4 8 12 16 20 0 4 8 12 16 20
0 4 8 12 16 20 0 4 8 12 16 20
0 4 8 12 16 20 0 4 8 12 16 20
0 10 20 30 40 50 0 25 50 75 100 125
R
G
= 10Ω, L = 100µH, V
CE
= 800V
10
8
6
4
2
0
12
10
8
6
4
2
0
2500
2000
1500
1000
500
0
4000
3500
3000
2500
2000
1500
1000
500
0
T
J
= 125°C, V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
140
120
100
80
60
40
20
0
90
80
70
60
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
2500
2000
1500
1000
500
0
V
CE
= 800V
V
GE
= +15V
R
G
= 10Ω
T
J
= 125°C
T
J
= 25°C
V
CE
= 800V
V
GE
= +15V
R
G
= 10Ω
T
J
= 125°C
T
J
= 25°C
E
on2,
16A
E
off,
16A
E
on2,
8A
E
off,
8A
E
on2,
4A
E
off,
4A
V
CE
= 800V
V
GE
= +15V
T
J
= 125°C
V
CE
= 800V
V
GE
= +15V
R
G
= 10Ω
E
on2,
16A
E
off,
16A
E
on2,
8A
E
off,
8A
E
on2,
4A
E
off,
4A