1
TechnischeInformation/TechnicalInformation
FF200R33KF2C
IGBT-Modul
IGBT-Module
preparedby:SB
approvedby:DTS
dateofpublication:2015-04-13
revision:V2.2
VorläufigeDaten
PreliminaryDataIGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
T
vj
= 25°C
T
vj
= -25°C
V
CES
3300
3300
V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
I
C nom
I
C
200
330
A
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
t
P
= 1 ms I
CRM
400 A
Gesamt-Verlustleistung
Totalpowerdissipation
T
C
= 25°C, T
vj max
= 150°C P
tot
2,20 kW
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
V
GES
+/-20 V
CharakteristischeWerte/CharacteristicValues
min. typ. max.
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
I
C
= 200 A, V
GE
= 15 V
I
C
= 200 A, V
GE
= 15 V
V
CE sat
3,40
4,30
4,25
5,00
V
V
T
vj
= 25°C
T
vj
= 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
I
C
= 20,0 mA, V
CE
= V
GE
, T
vj
= 25°C V
GEth
4,20 5,10 6,00 V
Gateladung
Gatecharge
V
GE
= -15 V ... +15 V, V
CE
= 1800V Q
G
4,00 µC
InternerGatewiderstand
Internalgateresistor
T
vj
= 25°C R
Gint
2,5 Ω
Eingangskapazität
Inputcapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
ies
25,0 nF
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
res
1,40 nF
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
V
CE
= 3300 V, V
GE
= 0 V, T
vj
= 25°C I
CES
5,0 mA
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C I
GES
400 nA
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
I
C
= 200 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Gon
= 5,6 Ω, C
GE
= 33,0 nF
t
d on
0,28
0,28
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
I
C
= 200 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Gon
= 5,6 Ω, C
GE
= 33,0 nF
t
r
0,18
0,20
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
I
C
= 200 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Goff
= 7,5 Ω, C
GE
= 33,0 nF
t
d off
1,55
1,70
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
I
C
= 200 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Goff
= 7,5 Ω, C
GE
= 33,0 nF
t
f
0,20
0,20
µs
µs
T
vj
= 25°C
T
vj
= 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
I
C
= 200 A, V
CE
= 1800 V, L
S
= 70 nH
V
GE
= ±15 V
R
Gon
= 5,6 Ω, C
GE
= 33,0 nF
E
on
235
365
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
I
C
= 200 A, V
CE
= 1800 V, L
S
= 70 nH
V
GE
= ±15 V
R
Goff
= 7,5 Ω, C
GE
= 33,0 nF
E
off
215
255
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
Kurzschlußverhalten
SCdata
V
GE
≤ 15 V, V
CC
= 2500 V
V
CEmax
= V
CES
-L
sCE
·di/dt
I
SC
1000 A
T
vj
= 125°C
t
P
≤ 10 µs,
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT R
thJC
57,0 K/kW
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proIGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
49,0 K/kW
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
T
vj op
-40 125 °C