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MUR8100EG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2008
June, 2008 − Rev. 4
1 Publication Order Number:
MUR8100E/D
MUR8100E, MUR880E
MUR8100E is a Preferred Device
SWITCHMODEt
Power Rectifiers
Ultrafast “E’’ Series with High Reverse
Energy Capability
The MUR8100 and MUR880E diodes are designed for use in
switching power supplies, inverters and as free wheeling diodes.
Features
• 20 mJ Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Popular TO−220 Package
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Reverse Voltage to 1000 V
• Pb−Free Packages are Available*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MUR8100E TO−220 50 Units / Rail
ULTRAFAST RECTIFIERS
8.0 A, 800 V − 1000 V
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
1
3
4
MUR8100EG TO−220
(Pb−Free)
50 Units / Rail
http://onsemi.com
MUR880E TO−220
50 Units / RailMUR880EG TO−220
(Pb−Free)
TO−220AC
CASE 221B
4
3
1
MARKING DIAGRAM
AY WWG
U8xxxE
KA
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
U8xxxE = Device Code
xxx = 100 or 80
KA = Diode Polarity
MUR8100E, MUR880E
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MUR880E
MUR8100E
V
RRM
V
RWM
V
R
800
1000
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 150°C) Total Device
I
F(AV)
8.0 A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 150°C)
I
FM
16 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
100 A
Operating Junction and Storage Temperature Range T
J
, T
stg
−65 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case
R
q
JC
2.0 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 8.0 A, T
C
= 150°C)
(i
F
= 8.0 A, T
C
= 25°C)
v
F
1.5
1.8
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
C
= 100°C)
(Rated DC Voltage, T
C
= 25°C)
i
R
500
25
mA
Maximum Reverse Recovery Time
(I
F
= 1.0 A, di/dt = 50 A/ms)
(I
F
= 0.5 A, i
R
= 1.0 A, I
REC
= 0.25 A)
t
rr
100
75
ns
Controlled Avalanche Energy
(See Test Circuit in Figure 6)
W
AVAL
20 mJ
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MUR8100E, MUR880E
http://onsemi.com
3
* The curves shown are typical for the highest voltage device in the voltage
* grouping. Typical reverse current for lower voltage selections can be
* estimated from these same curves if V
R
is sufficiently below rated V
R
.
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
Figure 3. Current Derating, Case
Figure 4. Current Derating, Ambient Figure 5. Power Dissipation
1.80.4
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
100
50
5.0
10
3.0
V
R
, REVERSE VOLTAGE (VOLTS)
0
10
0.1
0.01
T
C
, CASE TEMPERATURE (°C)
150140
10
3.0
2.0
1.0
0
20 600
T
A
, AMBIENT TEMPERATURE (°C)
8.0
6.0
4.0
2.0
0
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
1.00
14
10
8.0
2.0
0
4.040
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
II
0.7
0.5
1.20.8 1.0 1.4 1.6
200 400 600 800 1000
1.0
100
10,000
170 180
, AVERAGE FORWARD CURRENT (AMPS)I
F(AV)
80 120100
10
2.0 3.0 5.0
6.0
P
F(AV)
, AVERAGE POWER DISSIPATION (WATTS)
2.0
20
0.1
0.3
7.0
1.0
30
, REVERSE CURRENT ( A)
R
160
140 160 200180
m, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
6.0
5.0
4.0
9.0
8.0
7.0
6.0 9.07.0 8.0 10
7.0
5.0
3.0
1.0
9.0
T
J
= 175°C
SQUARE WAVE
dc
RATED V
R
APPLIED
SQUARE WAVE
dc
T
J
= 25°C
100°C
150°C
T
J
= 175°C
25°C
100°C
70
0.2
1000
4.0
12
R
q
JA
= 16°C/W
R
q
JA
= 60°C/W
(No Heat Sink)
SQUARE WAVE
dc
SQUARE WAVE
dc
0.6
175°C
P1-P3P4-P6

MUR8100EG

Mfr. #:
Buy MUR8100EG
Manufacturer:
ON Semiconductor
Description:
Rectifiers 1000V 8A UltraFast
Lifecycle:
New from this manufacturer.
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