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MUR8100EG

P1-P3P4-P6
MUR8100E, MUR880E
http://onsemi.com
4
t
0
t
1
t
2
t
V
DD
I
D
I
L
BV
DUT
MERCURY
SWITCH
Figure 6. Test Circuit Figure 7. Current−Voltage Waveforms
+V
DD
DUT
40 mH COIL
V
D
I
L
S
1
I
D
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S
1
is closed at t
0
the current in the inductor I
L
ramps
up linearly; and energy is stored in the coil. At t
1
the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV
DUT
and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t
2
.
By solving the loop equation at the point in time when S
1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V
DD
power supply while the diode is in
breakdown (from t
1
to t
2
) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
DD
voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S
1
was closed,
Equation (2).
The oscilloscope picture in Figure 8, shows the
MUR8100E in this test circuit conducting a peak current of
one ampere at a breakdown voltage of 1300 V, and using
Equation (2) the energy absorbed by the MUR8100E is
approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
W
AVAL
[
1
2
LI
2
LPK
ǒ
BV
DUT
BV
DUT
V
DD
Ǔ
W
AVAL
[
1
2
LI
2
LPK
Figure 8. Current−Voltage Waveforms
CHANNEL 2:
I
L
0.5 AMPS/DIV.
CHANNEL 1:
V
DUT
500 VOLTS/DIV.
TIME BASE:
20 ms/DIV.
EQUATION (1):
EQUATION (2):
CH1 CH2 REF REF
CH1
CH2
ACQUISITIONS
SAVEREF SOURCE
1 217:33 HRS
STACK
A
20ms
953 V VERT500V
50mV
MUR8100E, MUR880E
http://onsemi.com
5
t, TIME (ms)
1001.0
0.5
0.07
0.05
0.01
V
R
, REVERSE VOLTAGE (VOLTS)
101.0
1000
300
100
30
10
C, CAPACITANCE (pF)
2.0 5.0 10 20 50
0.3
0.7
1.0
100
r(t), TRANSIENT THERMAL RESISTANCE
0.2
0.1
0.03
0.02
0.01 0.02 0.05 0.1 0.2 0.5 200 500 1000
T
J
= 25°C
(NORMALIZED)
Figure 9. Thermal Response
Figure 10. Typical Capacitance
D = 0.5
0.1
0.05
0.01
SINGLE PULSE
Z
q
JC
(t) = r(t) R
q
JC
R
q
JC
= 1.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
MUR8100E, MUR880E
http://onsemi.com
6
PACKAGE DIMENSIONS
TO−220 TWO−LEAD
CASE 221B−04
ISSUE E
B
R
J
D
G
L
H
Q
T
U
A
K
C
S
4
13
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.595 0.620 15.11 15.75
B 0.380 0.405 9.65 10.29
C 0.160 0.190 4.06 4.82
D 0.025 0.035 0.64 0.89
F 0.142 0.161 3.61 4.09
G 0.190 0.210 4.83 5.33
H 0.110 0.130 2.79 3.30
J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.14 1.52
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.14 1.39
T 0.235 0.255 5.97 6.48
U 0.000 0.050 0.000 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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MUR8100E/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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P1-P3P4-P6

MUR8100EG

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Manufacturer:
ON Semiconductor
Description:
Rectifiers 1000V 8A UltraFast
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