IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ . Max.
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 35 58 S
C
iss
4000 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 410 pF
C
rss
60 pF
t
d(on)
14 ns
t
r
25 ns
t
d(off)
47 ns
t
f
25 ns
Q
g(on)
78 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
19 nC
Q
gd
22 nC
R
thJC
0.31 °C/W
R
thCH
(TO-220) 0.50 °C/W
(TO-3P & TO-247) 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ . Max.
I
S
V
GS
= 0V 50 A
I
SM
Repetitive, Pulse Width Limited by T
JM
200 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
166 ns
I
RM
23 A
Q
RM
1.9 μC
Note: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
V
GS
= 15V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3.3Ω (External)
I
F
= 25A, -di/dt = 250A/μs
V
R
= 100V, V
GS
= 0V
