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IXTQ50N25T

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
50
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
0 4 8 1216202428
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
5
10
15
20
25
30
35
40
45
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 25A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 50A
I
D
= 25A
Fig. 5. R
DS(on)
Normalized to I
D
= 25A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 20 40 60 80 100 120 140
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
5
10
15
20
25
30
35
40
45
50
55
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0 102030405060708090100
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
20
40
60
80
100
120
140
160
180
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 1020304050607080
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 125V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
IXYS REF: T_50N25T(5G)01-26-10-A
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
20
21
22
23
24
25
26
15 20 25 30 35 40 45 50
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3
,
V
GS
= 15V
V
DS
= 125V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
14
18
22
26
30
34
38
2468101214161820
R
G
- Ohms
t
r
- Nanoseconds
13
15
17
19
21
23
25
t
d
(
o n
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 25A, 50A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
18
19
20
21
22
23
24
25
26
27
28
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
42
44
46
48
50
52
54
56
58
60
62
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3, V
GS
= 15V
V
DS
= 125V
I
D
= 25A
I
D
= 50A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
16
18
20
22
24
26
28
30
15 20 25 30 35 40 45 50
I
D
- Amperes
t
f
- Nanoseconds
38
42
46
50
54
58
62
66
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3, V
GS
= 15V
V
DS
= 125V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 25ºC
T
J
= 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
19
20
21
22
23
24
25
26
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3
,
V
GS
= 15V
V
DS
= 125V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
10
20
30
40
50
60
70
80
90
100
2 4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
40
60
80
100
120
140
160
180
200
220
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 25A, 50A
P1-P3P4-P6

IXTQ50N25T

Mfr. #:
Buy IXTQ50N25T
Manufacturer:
Littelfuse
Description:
MOSFET 50Amps 250V
Lifecycle:
New from this manufacturer.
Delivery:
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