SGB30N60ATMA1 Datasheet SGB30N60ATMA1 | P1-P3

SGB30N60

1 Rev. 2.3 05.03.2009

Fast IGBT in NPT-technology

• 75% lower E

off

compared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Qualified according to JEDEC

1

for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type V

CE

I

C

V

CE(sat)

T

j

Marking Package

SGB30N60 600V 30A 2.5V

150°C

G30N60 PG-TO-263-3-2

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

V

CE

600 V

DC collector current

T

C

= 25°C

T

C

= 100°C

I

C

41

30

Pulsed collector current, t

p

limited by T

jmax

I

Cpuls

112

Turn off safe operating area

V

CE

≤ 600V, T

j

≤ 150°C

-

112

A

Gate-emitter voltage V

GE

±20

V

Avalanche energy, single pulse

I

C

= 30 A, V

CC

= 50 V, R

GE

= 25 Ω,

start at T

j

= 25°C

E

AS

165 mJ

Short circuit withstand time

2

V

GE

= 15V, V

CC

≤ 600V, T

j

≤ 150°C

t

SC

10

µs

Power dissipation

T

C

= 25°C

P

tot

250 W

Operating junction and storage temperature T

j

, T

stg

-55...+150

Soldering temperature (reflow soldering, MSL1)

260

°C

1

J-STD-020 and JESD-022

2

Allowed number of short circuits: <1000; time between short circuits: >1s.

G

C

E

PG-TO-263-3-2 (D²-PAK)

(TO-263AB)

SGB30N60

2 Rev. 2.3 05.03.2009

Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,

junction – case

R

thJC

0.5 K/W

Thermal resistance,

junction – ambient

1)

R

thJA

40

Electrical Characteristic, at T

j

= 25 °C, unless otherwise specified

Value

Parameter Symbol Conditions

min. Typ. max.

Unit

Static Characteristic

Collector-emitter breakdown voltage V

(BR)CES

V

GE

=0V, I

C

=500µA

600 - -

Collector-emitter saturation voltage V

CE(sat)

V

GE

= 15V, I

C

=30A

T

j

=25°C

T

j

=150°C

1.7

-

2.1

2.5

2.4

3.0

Gate-emitter threshold voltage V

GE(th)

I

C

=700µA,V

CE

=V

GE

3 4 5

V

Zero gate voltage collector current

I

CES

V

CE

=600V,V

GE

=0V

T

j

=25°C

T

j

=150°C

-

40

3000

µA

Gate-emitter leakage current I

GES

V

CE

=0V,V

GE

=20V - - 100 nA

Transconductance g

fs

V

CE

=20V, I

C

=30A - 20 - S

Dynamic Characteristic

Input capacitance C

iss

- 1600 1920

Output capacitance C

oss

- 150 180

Reverse transfer capacitance C

rss

V

CE

=25V,

V

GE

=0V,

f=1MHz

- 92 110

pF

Gate charge Q

Gate

V

CC

=480V, I

C

=30A

V

GE

=15V

- 140 182 nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

L

E

- 7

- nH

Short circuit collector current

2)

I

C(SC)

V

GE

=15V,t

SC

≤10µs

V

CC

≤ 600V,

T

j

≤ 150°C

- 300 - A

1)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

2

(one layer, 70µm thick) copper area for

collector connection. PCB is vertical without blown air.

2)

Allowed number of short circuits: <1000; time between short circuits: >1s.

SGB30N60

3 Rev. 2.3 05.03.2009

Switching Characteristic, Inductive Load, at T

j

=25 °C

Value

Parameter Symbol Conditions

min. typ. max.

Unit

IGBT Characteristic

Turn-on delay time t

d(on)

- 44 53

Rise time t

r

- 34 40

Turn-off delay time t

d(off)

- 291 349

Fall time t

f

- 58 70

ns

Turn-on energy E

on

- 0.64 0.77

Turn-off energy E

off

- 0.65 0.85

Total switching energy E

ts

T

j

=25°C,

V

CC

=400V,I

C

=30A,

V

GE

=0/15V,

R

G

=11Ω,

L

σ

1)

=180nH,

C

σ

1)

=900pF

Energy losses include

“tail” and diode

reverse recovery.

- 1.29 1.62

mJ

Switching Characteristic, Inductive Load, at T

j

=150 °C

Value

Parameter Symbol Conditions

min. typ. max.

Unit

IGBT Characteristic

Turn-on delay time t

d(on)

- 44 53

Rise time t

r

- 34 40

Turn-off delay time t

d(off)

- 324 389

Fall time t

f

- 67 80

ns

Turn-on energy E

on

- 0.98 1.18

Turn-off energy E

off

- 0.92 1.19

Total switching energy E

ts

T

j

=150°C

V

CC

=400V,I

C

=30A,

V

GE

=0/15V,

R

G

= 11Ω,

L

σ

1)

=180nH,

C

σ

1)

=900pF

Energy losses include

“tail” and diode

reverse recovery.

- 1.90 2.38

mJ

1)

Leakage inductance L

σ

and Stray capacity C

σ

due to dynamic test circuit in Figure E.

SGB30N60ATMA1

SGB30N60ATMA1

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