SGB30N60
7 Rev. 2.3 05.03.2009
E, SWITCHING ENERGY LOSSES
10A 20A 30A 40A 50A 60A 70A
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
3.5mJ
4.0mJ
4.5mJ
5.0mJ
E
on
*
E
off
E
ts
*
E, SWITCHING ENERGY LOSSES
0Ω 10Ω 20Ω 30Ω 40Ω
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
3.5mJ
4.0mJ
E
ts
*
E
on
*
E
off
I
C
, COLLECTOR CURRENT R
G
, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
j
= 150°C, V
CE
= 400V,
V
GE
= 0/+15V, R
G
= 11Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
j
= 150°C, V
CE
= 400V,
V
GE
= 0/+15V, I
C
= 30A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
0°C 50°C 100°C 150°C
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
E
ts
*
E
on
*
E
off
Z
thJC
, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms 1s
10
-4
K/W
10
-3
K/W
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
T
j
, JUNCTION TEMPERATURE
t
p
, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
CE
= 400V, V
GE
= 0/+15V,
I
C
= 30A, R
G
= 11Ω,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
p
/ T)
*) E
on
and E
ts
include losses
due to diode recovery.
*) E
on
and E
ts
include losses
due to diode recovery.
*) E
on
and E
ts
include losses
due to diode recovery.
C
1
=
τ
1
/ R
1
R
1
R
2
C
2
=
τ
2
/ R
2
R ,(1/W)
τ
, (s)
0.3681 0.0555
0.0938 1.26*10
-3
0.0380 1.49*10
-4
