IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1 12 20 S
C
iss
2845 pF
C
oss
V
GS
= 0V, V
DS
= - 25V, f = 1MHz 1015 pF
C
rss
275 pF
t
d(on)
22 ns
t
r
29 ns
t
d(off)
38 ns
t
f
22 ns
Q
g(on)
60 nC
Q
gs
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
17 nC
Q
gd
23 nC
R
thJC
0.42 °C/W
R
thCS
(TO-3P)(TO-247) 0.21 °C/W
(TO-220) 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V - 52 A
I
SM
Repetitive, pulse width limited by T
JM
- 200 A
V
SD
I
F
= - 26A, V
GS
= 0V, Note 1 - 3.5 V
t
rr
120 ns
Q
RM
0.53 μC
I
RM
- 8.9 A
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3.3Ω (External)
I
F
= - 26A, -di/dt = -100A/μs
V
R
= - 50V, V
GS
= 0V
