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IXTH52P10P

P1-P3P4-P6
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
Fig. 1. Output Characteristics
@ 25ºC
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-2.8-2.4-2.0-1.6-1.2-0.8-0.40.0
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 5
V
- 6
V
- 7
V
- 8
V
Fig. 2. Extended Output Characteristics
@ 25ºC
-130
-110
-90
-70
-50
-30
-10
-30-27-24-21-18-15-12-9-6-30
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 8
V
- 6
V
- 7
V
- 5
V
- 9
V
Fig. 3. Output Characteristics
@ 125ºC
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-5.5-5.0-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 6
V
- 5V
- 7
V
- 8
V
Fig. 5. R
DS(on)
Normalized to I
D
= - 26A vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-100-90-80-70-60-50-40-30-20-100
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
T
J
= 25ºC
T
J
= 125ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 4. R
DS(on)
Normalized to I
D
= - 26A vs.
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= - 26
A
I
D
= - 52
A
© 2008 IXYS CORPORATION, All rights reserved
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
Fig. 7. Input Admittance
-70
-60
-50
-40
-30
-20
-10
0
-8.0-7.5-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Volts
I
D
- Amperes
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
4
8
12
16
20
24
28
32
-70-60-50-40-30-20-100
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
-160
-140
-120
-100
-80
-60
-40
-20
0
-5.0-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 50V
I
D
= - 26A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
10 100
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit @ V
GS
= -15V
10ms
DC, 100ms
-
-
--
-
-
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
IXYS REF: T_52P10P(B5)3-25-08-B
Fig. 13. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P6

IXTH52P10P

Mfr. #:
Buy IXTH52P10P
Manufacturer:
Littelfuse
Description:
MOSFET -52.0 Amps -100V 0.050 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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