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IRLL2705TRPBF

P1-P3P4-P6P7-P9
IRLL2705PbF
HEXFET
®
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.04Ω
I
D
= 3.8A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application
05/28/04
Description
l Surface Mount
l Dynamic dv/dt Rating
l Logic-Level Gate Drive
l Fast Switching
l Ease of Paralleling
l Advanced Process Technology
l Ultra Low On-Resistance
l Lead-Free
SOT-223
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Parameter Typ. Max. Units
R
θJA
Junction-to-Amb. (PCB Mount, steady state)* 93 120
R
θJA
Junction-to-Amb. (PCB Mount, steady state)** 48 60
Thermal Resistance
°C/W
Parameter Max. Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V** 5.2
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V* 3.8
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V* 3.0
I
DM
Pulsed Drain Current 30
P
D
@T
A
= 25°C Power Dissipation (PCB Mount)** 2.1 W
P
D
@T
A
= 25°C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy 110 mJ
I
AR
Avalanche Current 3.8 A
E
AR
Repetitive Avalanche Energy 0.10 mJ
dv/dt Peak Diode Recovery dv/dt 7.5 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
A
www.irf.com 1
PD- 95338
IRLL2705PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55   V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient  0.061  V/°C Reference to 25°C, I
D
= 1mA
  0.040 V
GS
= 10V, I
D
= 3.8A
  0.051 Ω V
GS
= 5.0V, I
D
= 3.8A
  0.065 V
GS
= 4.0V, I
D
= 1.9A
V
GS(th)
Gate Threshold Voltage 1.0  2.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 5.1   S V
DS
= 25V, I
D
= 1.9A
  25 V
DS
= 55V, V
GS
= 0V
  250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage   100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage   -100 V
GS
= -16V
Q
g
Total Gate Charge  32 48 I
D
= 3.8A
Q
gs
Gate-to-Source Charge  3.5 5.3 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge  9.7 14 V
GS
= 10V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time  6.2  V
DD
= 28V
t
r
Rise Time  12 
ns
I
D
= 3.8A
t
d(off)
Turn-Off Delay Time  35  R
G
= 6.2Ω
t
f
Fall Time  22  R
D
= 7.1Ω, See Fig. 10
C
iss
Input Capacitance  870  V
GS
= 0V
C
oss
Output Capacitance  220  pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance  92  = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
µA
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
 
MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current
 
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage   1.3 V T
J
= 25°C, I
S
= 3.8A, V
GS
= 0V
t
rr
Reverse Recovery Time  58 88 ns T
J
= 25°C, I
F
= 3.8A
Q
rr
Reverse RecoveryCharge  140 210 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
30
0.91
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 3.8A, di/dt ≤ 220A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
V
DD
= 25V, starting T
J
= 25°C, L = 15mH
R
G
= 25Ω, I
AS
= 3.8A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRLL2705PbF
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1
10
100
0.1 1 10 10
0
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10 10
0
A
DS
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
V , Drain-to-Source Voltage (V)
1
10
100
3.0 3.5 4.0 4.5 5.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 25V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 3.8A
D
P1-P3P4-P6P7-P9

IRLL2705TRPBF

Mfr. #:
Buy IRLL2705TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 55V 3.8A 40mOhm 32nC Log Lvl
Lifecycle:
New from this manufacturer.
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