IRLL2705TRPBF

P1-P3 P4-P6 P7-P9

IRLL2705PbF

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

200

400

600

800

1000

1200

1400

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

4

8

12

16

20

0 1020304050

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

A

FOR TEST CIRCUIT

SEE FIGURE 9

I = 3.8A

V = 44V

V = 28V

D

DS

DS

1

10

100

0.4 0.6 0.8 1.0 1.2 1.

4

T = 25°C

T = 150°C

J

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

A

0.1

1

10

100

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

T = 25°C

T = 150°C

Single Pulse

100µs

1ms

10ms

A

A

J

10µs

IRLL2705PbF

www.irf.com 5

+

-

V

DS

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

V

DD

R

G

D.U.T.

10V

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T.

V

D

S

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

V

DS

9

0%

1

0%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

Fig 10a. Switching Time Test Circuit

Fig 9a. Basic Gate Charge Waveform

Fig 9b. Gate Charge Test Circuit

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.01

0.1

1

10

100

1000

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000

t , Rectangular Pulse Duration (sec)

1

D = 0.50

0.01

0.02

0.05

0.10

0.20

SINGLE PULSE

(THERMAL RESPONSE)

A

Thermal Response (Z )

thJA

P

t

2

1

t

DM

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1

2

J

DM

thJA

A

IRLL2705PbF

6 www.irf.com

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

0

50

100

150

200

250

25 50 75 100 125 15

0

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Starting T , Junction Temperature (°C)

V = 25V

I

TOP 1.7A

3.0A

BOTTOM 3.8A

DD

D

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

P1-P3 P4-P6 P7-P9

IRLL2705TRPBF

Mfr. #:

Buy IRLL2705TRPBF

Manufacturer:

Infineon Technologies

Description:

MOSFET MOSFT 55V 3.8A 40mOhm 32nC Log Lvl

Lifecycle:

New from this manufacturer.

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