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STP8NK85Z - STF8NK85Z Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
TO-220 TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 850 V
V
GS
Gate- source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25°C 6.7 6.7
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
= 100°C 4.3 4.3
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 26.7 26.7
(1)
A
P
TOT
Total dissipation at T
C
= 25°C 150 35 W
Derating factor 1.20 0.28 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt
(3)
3. I
SD
≤ 6.7 A, di/dt ≤ 200A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX.
Peak diode recovery voltage slope 4.5 V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s; Tc= 25°C)
- 2500 V
T
j
T
stg
Max operating junction temperature
Storage temperature
-55 to 150 °C
Table 2. Thermal data
Symbol Parameter Value Unit
TO-220 TO-220FP
R
thj-case
Thermal resistance junction-case max 0.83 3.6 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
6.7 A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
350 mJ
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