EFC3C001NUZTCG

EFC3C001NUZ
www.onsemi.com
4
I
S
-- V
GS
Source Current, I
S
-- A
Gate to Source Voltage, V
GS
-- V
Source to Source Voltage, V
SS
-- V
I
S
-- V
SS
Source Current, I
S
-- A
0
2
4
3
9
10
0 0.5 1.0 1.5 2.0 2.5
V
SS
=10V
-- 25
C
Ta=75C
25
C
0
1.5
1.0
0.5
4.5
3.5
2.0
5.0
6.0
0 0.1 0.40.2 0.60.50.3 0.80.7 0.9 1.0
V
GS
=1.0V
2.5V
3.8V
4.5V
10V
Gate to Source Voltage, V
GS
-- V
Static Source to Source
On-State Resistance, R
SS
(on) -- m
Ambient Temperature, Ta
-- C
R
SS
(on)
-- TaR
SS
(on)
-- V
GS
Static Source to Source
On-State Resistance, R
SS
(on) -- m
I
S
-- V
F(S-S)
Source Current, I
S
-- A
Forward Source to Source Voltage, V
F(S-S)
-- V
SW Time -- I
S
Switching Time, SW Time -- ns
Source Current, I
S
-- A
0 0.6 1.21.0
0.01
0.1
7
5
3
2
--60 --40 --20 0 20 40 60 80 100 120 140 160
0
10
30
20
60
70
80
50
V
GS
=2.5V, I
S
=2A
V
GS
=3.1V, I
S
=2A
Ta=25C
25
C
--25
C
Ta=75C
V
GS
=0V
10
3
2
7
5
1000
0.01
V
SS
=10V
V
GS
=4.5V
t
d
(off)
t
r
t
f
2
3
5
7
10
t
d
(on)
I
S
=2A
0642810
0
10
50
40
70
80
2.5
3.0
4.0
5.5
30
V
GS
=4.5V, I
S
=2A
0.2 0.4 0.8
10
1.0
0.1
1.0
100000
Total Gate Charge, Qg -- nC
V
GS
-- Qg
Gate to Source Voltage, V
GS
-- V
01610 14842
0
1.0
2.0
2.5
4.5
3.5
V
SS
=10V
I
S
=6A
6
12
0.5
1.5
3.0
4.0
1
6
8
7
5
Ta=25C
40
V
GS
=3.8V, I
S
=2A
7
5
3
2
7
5
3
2
S O A
Source to Source Voltage, V
SS
-- V
Source Current, I
S
-- A
Operation in this area
is limited by R
SS
(on).
DC operation
1ms
10ms
100ms
0.1
1.0
10
0.01
0.10.01
5
723
1.0 10
I
S
=6A
I
SP
=60A
(PW100s)
Ta=25C
Single pulse
Surface mounted on ceramic substrate
(5000mm
2
0.8mm)
5
723
5
723
5
723
100
2
3
5
7
100
1.3V
3.1V
20
60
100
3
2
7
5
3
2
7
5
3
2
7
5
10000
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
100
s
EFC3C001NUZ
www.onsemi.com
5
Ambient Temperature, Ta -- C
P
T
-- Ta
Total Dissipation, P
T
-- W
0
0
20 40
0.6
60 80 100 120 140 160
0.2
1.0
1.6
1.2
1.8
Surface mounted on ceramic substrate
(5000mm
2
0.8mm)
0.01
7
5
3
2
100
R
JA
-- Pulse Time
Pulse Time, PT -- s
Thermal Resistance, R
JA
-- ºC/W
0.000001 0.00001 0.0001 0.001
23 57
0.01 0.1 10
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.1
23 57 23
57
23
57
23
57
23 5
7
23
57
1.0
1.0
Surface mounted on ceramic substrate
(5000mm
2
0.8mm)
10
0.4
0.8
1.4
7
5
3
2
7
5
3
2
7
5
3
2
EFC3C001NUZ
www.onsemi.com
6
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WLCSP4 1.26x1.26 / EFCP1313-4DG-020
CASE 567LM
ISSUE O
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
DIM
A
MIN MAX
0.18
MILLIMETERS
b 0.22 0.28
e 0.50 BSC
0.22
D
E
A
B
PIN 1
REFERENCE
e
0.03 C
4X
b
0.03 C
A
C
0.25
4X
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.50
0.50
TOP VIEW
SIDE VIEW
BOTTOM VIEW
e
RECOMMENDED
PACKAGE
OUTLINE
43
PITCH
PITCH
12
D 1.21
E 1.21 1.31
1.31
A1
A
M
0.10 BC
PACKAGE DIMENSIONS
unit : mm
ORDERING INFORMATION
Device Marking Package Shipping (Qty / Packing)
EFC3C001NUZTCG WC
WLCSP4, 1.26
1.26 /
EFCP1313-4DG-020
(Pb-Free / Halogen Free)
5,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the EFC3C001NUZ is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects. Please contact sales for use except the designated application.
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2

EFC3C001NUZTCG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Motor / Motion / Ignition Controllers & Drivers NCH+NCH 2.5V DRIVE SERIES
Lifecycle:
New from this manufacturer.
Delivery:
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