NCP1288
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS (For typical values T
J
= 25°C, for min/max values T
J
= −40°C to +125°C, V
HV
= 120 V,
V
CC
= 11 V unless otherwise noted)
Characteristics
Test Condition Symbol Min Typ Max Unit
HIGH VOLTAGE CURRENT SOURCE
Minimum voltage for current source operation
V
HV(min)
− − 60 V
Current flowing out of V
CC
pin @ V
HV
= 60 V V
CC
= 0 V
V
CC
= V
CC(on)
− 0.5 V
I
start1
I
start2
0.2
4
0.5
8
0.8
12
mA
Off−state leakage current V
HV
= 500 V I
start(off)
− 25 50
mA
SUPPLY
Turn−on threshold level, V
CC
going up
HV current source stop threshold
V
CC(on)
15.0 16.0 17.0 V
UVLO and HV current source restart threshold V
CC(min)
9.5 10.5 11.5 V
Hysteresis between V
CC(on)
and V
CC(min)
V
CC(HYS)
5.0 − − V
Blanking duration on V
CC(min)
and V
CC(off)
detection Guaranteed by design t
UVLO(blank)
7 10 13
ms
V
CC
decreasing level at which the internal logic resets V
CC(reset)
4.0 5.2 6.5 V
V
CC
level for I
START1
to I
START2
transition V
CC(inhibit)
0.4 0.65 0.9 V
Internal current consumption (Note 5) DRV open, V
FB
= 3 V
C
drv
= 1 nF, V
FB
= 3 V
Off mode (skip or before
startup)
Fault mode (fault or latch)
ICC1
ICC2
ICC3
ICC4
2.0
2.3
0.9
0.4
2.5
3.3
1.2
0.7
3.0
4.3
1.5
1.0
mA
BROWN−OUT AND LINE OVERVOLTAGE
Brown−out threshold voltage
V
HV
going up
V
HV
going down
V
HV(start)
V
HV(stop)
104
97
112
105
120
113
V
Timer duration for line cycle drop−out t
HV
43 61 79 ms
Overvoltage threshold V
HV
going up
V
HV
going down
V
HV(OV1)
V
HV(OV2)
400
395
430
425
460
455
V
Blanking duration on line overvoltage detection t
OV(blank)
− 250 −
ms
OSCILLATOR
Oscillator frequency
f
OSC
60 65 70 kHz
Maximum duty ratio D
MAX
75 80 85 %
Frequency jittering amplitude, in percentage of F
OSC
Guaranteed by design A
jitter
$4 $6 $8 %
Frequency jittering modulation frequency Guaranteed by design F
jitter
85 125 165 Hz
OUTPUT DRIVER
Rise time, 10% to 90% of V
CC
V
CC
= V
CC(min)
+ 0.2 V,
C
DRV
= 1 nF
t
rise
− 22 34 ns
Fall time, 90% to 10% of V
CC
V
CC
= V
CC(min)
+ 0.2 V,
C
DRV
= 1 nF
t
fall
− 22 34 ns
Current Capability V
CC
= V
CC(min)
+ 0.2 V,
C
DRV
= 1 nF
DRV high, V
DRV
= 0 V
DRV low, V
DRV
= V
CC
I
DRV(source)
I
DRV(sink)
−
−
1000
1000
−
−
mA
Clamping Voltage (Maximum Gate Voltage) V
CC
= V
CCmax
– 0.2 V, DRV
high
V
DRV(clamp)
11 13.5 16 V
High−State Voltage Drop V
CC
= V
CC(min)
+ 0.2 V,
R
DRV
= 33 kW, DRV high
V
DRV(drop)
− − 1 V
5. Internal supply current only, current in FB pin not included (current flowing through GND pin only).